We present and experimentally verify a universal theoretical framework for the description of spin-charge interconversion in non-magnetic metal/insulator structures with interfacial spin–orbit coupling (ISOC). Our formulation is based on drift-diffusion equations supplemented with generalized boundary conditions. The latter encode the effects of ISOC and relate the electronic transport in such systems to spin loss and spin-charge interconversion at the interface. We demonstrate that the conversion efficiency depends solely on these interfacial parameters. We apply our formalism to two typical spintronic devices that exploit ISOC: a lateral spin valve and a multilayer Hall bar, for which we calculate the non-local resistance and the spin Hall magnetoresistance, respectively. Finally, we perform measurements on these two devices with a BiOx/Cu interface and verify that transport properties related to the ISOC are quantified by the same set of interfacial parameters.
Quantification of interfacial spin-charge conversion in hybrid devices with a metal/insulator interface
Cristina Sanz-Fernández, Van Tuong Pham, Edurne Sagasta, Luis E. Hueso, Ilya V. Tokatly, Fèlix Casanova, F. Sebastián Bergeret; Quantification of interfacial spin-charge conversion in hybrid devices with a metal/insulator interface. Appl. Phys. Lett. 5 October 2020; 117 (14): 142405. https://doi.org/10.1063/5.0023992
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