Ion migration into blocking layers toward the metallic electrodes is studied within a semiconductor device model framework. We find that ion leakage into the blocking layers and their accumulation at the electrode interface are significantly affected by the electronic injection barrier at the contact. Specifically, we find that if the device structure promotes, under light, hole (electron) accumulation within the perovskite layer, these excess holes (electrons) would release an almost equivalent number of cations (anions) into the transport layers toward the contacts. Our analysis suggests that it would be beneficial to include intentional doping of the blocking layers and that it should follow the “just enough” strategy.
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