Low-threshold lasing under pulsed optical pumping is demonstrated at room temperature for III-nitride microdisks with InGaN/GaN quantum wells on Si in the blue spectral range. Thresholds in the range of have been achieved along with narrow linewidths of 0.07 nm and a large peak-to-background dynamic of 300. We compare this threshold range with the one that can be calculated using a rate equation model. We show that thresholds in the few range constitute the best that can be achieved with III-nitride quantum wells at room temperature. The sensitivity of lasing on the fabrication process is also discussed.
Analysis of low-threshold optically pumped III-nitride microdisk lasers
Farsane Tabataba-Vakili, Christelle Brimont, Blandine Alloing, Benjamin Damilano, Laetitia Doyennette, Thierry Guillet, Moustafa El Kurdi, Sébastien Chenot, Virginie Brändli, Eric Frayssinet, Jean-Yves Duboz, Fabrice Semond, Bruno Gayral, Philippe Boucaud; Analysis of low-threshold optically pumped III-nitride microdisk lasers. Appl. Phys. Lett. 21 September 2020; 117 (12): 121103. https://doi.org/10.1063/5.0015252
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