Technological feasibility of III-nitride vertical cavity surface emitting laser (VCSEL) has been hindered by the lack of an electrically conductive, easily manufacturable, wide reflection stop band distributed Bragg reflector (DBR). Here, we present the first electrically injected III-nitride VCSEL on an electrically conductive DBR using nanoporous (NP) GaN. The measured threshold current density and the maximum light output power were 42 kA/cm2 and 0.17 mW, respectively, at 434 nm. Vertical injection was demonstrated and showed no deterioration in the threshold current density or slope efficiency, demonstrating the feasibility of vertical injection in NP GaN VCSELs. Filamentary lasing was observed, and its effect on the slope efficiency and the lasing linewidth is studied. Initial measurements showing the correlation between the measured high threshold current density and surface undulations are presented and discussed.
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Room-temperature operation of c-plane GaN vertical cavity surface emitting laser on conductive nanoporous distributed Bragg reflector
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6 July 2020
Research Article|
July 06 2020
Room-temperature operation of c-plane GaN vertical cavity surface emitting laser on conductive nanoporous distributed Bragg reflector
Rami T. ElAfandy
;
Rami T. ElAfandy
1
Department of Electrical Engineering, Yale University
, New Haven, Connecticut 06520, USA
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Jin-Ho Kang
;
Jin-Ho Kang
1
Department of Electrical Engineering, Yale University
, New Haven, Connecticut 06520, USA
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Bingjun Li
;
Bingjun Li
1
Department of Electrical Engineering, Yale University
, New Haven, Connecticut 06520, USA
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Tae Kyoung Kim
;
Tae Kyoung Kim
2
Department of Printed Electronics Engineering, Sunchon National University
, Jeonnam 57922, South Korea
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Joon Seop Kwak
;
Joon Seop Kwak
2
Department of Printed Electronics Engineering, Sunchon National University
, Jeonnam 57922, South Korea
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Jung Han
Jung Han
a)
1
Department of Electrical Engineering, Yale University
, New Haven, Connecticut 06520, USA
a)Author to whom correspondence should be addressed: [email protected]
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Rami T. ElAfandy
1
Jin-Ho Kang
1
Bingjun Li
1
Tae Kyoung Kim
2
Joon Seop Kwak
2
Jung Han
1,a)
1
Department of Electrical Engineering, Yale University
, New Haven, Connecticut 06520, USA
2
Department of Printed Electronics Engineering, Sunchon National University
, Jeonnam 57922, South Korea
a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 117, 011101 (2020)
Article history
Received:
April 29 2020
Accepted:
May 22 2020
Citation
Rami T. ElAfandy, Jin-Ho Kang, Bingjun Li, Tae Kyoung Kim, Joon Seop Kwak, Jung Han; Room-temperature operation of c-plane GaN vertical cavity surface emitting laser on conductive nanoporous distributed Bragg reflector. Appl. Phys. Lett. 6 July 2020; 117 (1): 011101. https://doi.org/10.1063/5.0012281
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