We demonstrate large area (25 000 μm2) Al-rich AlGaN-based avalanche photodiodes (APDs) grown on single crystal AlN substrates operating with differential (the difference in photocurrent and dark current) signal gain of 100 000 at 90 pW (<1 μW cm−2) illumination with very low dark currents <0.1 pA at room temperature under ambient light. The high gain in large area AlGaN APDs is attributed to a high breakdown voltage at 340 V, corresponding to very high breakdown fields ∼9 MV cm−1 as a consequence of low threading and screw dislocation densities < 103 cm−2. The maximum charge collection efficiency of 30% was determined at 255 nm, corresponding to the bandgap of Al0.65Ga0.35N, with a response of 0.06 A/W. No response was detected for λ > 280 nm, establishing solar blindness of the device.
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24 February 2020
Research Article|
February 24 2020
High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates
Pramod Reddy
;
Pramod Reddy
a)
1
Adroit Materials, Inc
., 2054 Kildaire Farm Rd., Cary, North Carolina 27518, USA
a)Author to whom correspondence should be addressed: [email protected]
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M. Hayden Breckenridge
;
M. Hayden Breckenridge
2
Department of Materials Science and Engineering, North Carolina State University
, Raleigh, North Carolina 27695-7919, USA
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Qiang Guo
;
Qiang Guo
2
Department of Materials Science and Engineering, North Carolina State University
, Raleigh, North Carolina 27695-7919, USA
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Andrew Klump
;
Andrew Klump
2
Department of Materials Science and Engineering, North Carolina State University
, Raleigh, North Carolina 27695-7919, USA
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Dolar Khachariya;
Dolar Khachariya
3
Department of Electrical and Computer Engineering, North Carolina State University
, Raleigh, North Carolina 27695-7919, USA
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Spyridon Pavlidis;
Spyridon Pavlidis
3
Department of Electrical and Computer Engineering, North Carolina State University
, Raleigh, North Carolina 27695-7919, USA
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Will Mecouch
;
Will Mecouch
1
Adroit Materials, Inc
., 2054 Kildaire Farm Rd., Cary, North Carolina 27518, USA
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Seiji Mita;
Seiji Mita
1
Adroit Materials, Inc
., 2054 Kildaire Farm Rd., Cary, North Carolina 27518, USA
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Baxter Moody;
Baxter Moody
1
Adroit Materials, Inc
., 2054 Kildaire Farm Rd., Cary, North Carolina 27518, USA
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James Tweedie;
James Tweedie
1
Adroit Materials, Inc
., 2054 Kildaire Farm Rd., Cary, North Carolina 27518, USA
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Ronny Kirste;
Ronny Kirste
1
Adroit Materials, Inc
., 2054 Kildaire Farm Rd., Cary, North Carolina 27518, USA
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Erhard Kohn;
Erhard Kohn
2
Department of Materials Science and Engineering, North Carolina State University
, Raleigh, North Carolina 27695-7919, USA
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Ramon Collazo;
Ramon Collazo
2
Department of Materials Science and Engineering, North Carolina State University
, Raleigh, North Carolina 27695-7919, USA
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Zlatko Sitar
Zlatko Sitar
1
Adroit Materials, Inc
., 2054 Kildaire Farm Rd., Cary, North Carolina 27518, USA
2
Department of Materials Science and Engineering, North Carolina State University
, Raleigh, North Carolina 27695-7919, USA
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a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 116, 081101 (2020)
Article history
Received:
November 13 2019
Accepted:
February 09 2020
Citation
Pramod Reddy, M. Hayden Breckenridge, Qiang Guo, Andrew Klump, Dolar Khachariya, Spyridon Pavlidis, Will Mecouch, Seiji Mita, Baxter Moody, James Tweedie, Ronny Kirste, Erhard Kohn, Ramon Collazo, Zlatko Sitar; High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates. Appl. Phys. Lett. 24 February 2020; 116 (8): 081101. https://doi.org/10.1063/1.5138127
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