The creation of single, negatively charged silicon vacancy () centers in well-defined diamond layers close to the host surface is a crucial step for the development of diamond-based quantum optic devices with many applications in nanophotonics, quantum sensing, or quantum information science. Here, we report on the creation of shallow (10 nm below the surface), single centers in diamond using low energy ion implantation with subsequent high temperature annealing at 1500 °C. We show transition linewidths down to 99 MHz and narrow inhomogeneous distributions. Furthermore, we achieved a reduction of homogeneous linewidths by a factor of 2 after removing subsurface damage using oxygen plasma processing. These results not only give insights into the formation process of centers but also indicate a favorable processing method to fabricate shallow single quantum emitters in diamond perfectly suited for coupling to nanostructures on the diamond surface.
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10 February 2020
Research Article|
February 10 2020
Long optical coherence times of shallow-implanted, negatively charged silicon vacancy centers in diamond
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Johannes Lang
;
Johannes Lang
a)
1
Institute for Quantum Optics, Ulm University
, Albert-Einstein-Allee 11, Ulm 89081, Germany
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Stefan Häußler;
Stefan Häußler
1
Institute for Quantum Optics, Ulm University
, Albert-Einstein-Allee 11, Ulm 89081, Germany
2
Center for Integrated Quantum Science and Technology (IQST), Ulm University
, Albert-Einstein-Allee 11, Ulm 89081, Germany
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Jens Fuhrmann;
Jens Fuhrmann
1
Institute for Quantum Optics, Ulm University
, Albert-Einstein-Allee 11, Ulm 89081, Germany
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Richard Waltrich;
Richard Waltrich
1
Institute for Quantum Optics, Ulm University
, Albert-Einstein-Allee 11, Ulm 89081, Germany
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Sunny Laddha;
Sunny Laddha
1
Institute for Quantum Optics, Ulm University
, Albert-Einstein-Allee 11, Ulm 89081, Germany
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Jochen Scharpf;
Jochen Scharpf
3
NVision Imaging Technologies GmbH
, Albert-Einstein-Allee 11, Ulm 89081, Germany
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Alexander Kubanek;
Alexander Kubanek
1
Institute for Quantum Optics, Ulm University
, Albert-Einstein-Allee 11, Ulm 89081, Germany
2
Center for Integrated Quantum Science and Technology (IQST), Ulm University
, Albert-Einstein-Allee 11, Ulm 89081, Germany
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Boris Naydenov;
Boris Naydenov
b)
1
Institute for Quantum Optics, Ulm University
, Albert-Einstein-Allee 11, Ulm 89081, Germany
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Fedor Jelezko
Fedor Jelezko
1
Institute for Quantum Optics, Ulm University
, Albert-Einstein-Allee 11, Ulm 89081, Germany
2
Center for Integrated Quantum Science and Technology (IQST), Ulm University
, Albert-Einstein-Allee 11, Ulm 89081, Germany
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Johannes Lang
1,a)
Stefan Häußler
1,2
Jens Fuhrmann
1
Richard Waltrich
1
Sunny Laddha
1
Jochen Scharpf
3
Alexander Kubanek
1,2
Boris Naydenov
1,b)
Fedor Jelezko
1,2
1
Institute for Quantum Optics, Ulm University
, Albert-Einstein-Allee 11, Ulm 89081, Germany
2
Center for Integrated Quantum Science and Technology (IQST), Ulm University
, Albert-Einstein-Allee 11, Ulm 89081, Germany
3
NVision Imaging Technologies GmbH
, Albert-Einstein-Allee 11, Ulm 89081, Germany
a)
Electronic mail: [email protected]
b)
Present address: Helmholtz-Zentrum Berlin für Materialien und Energie (HZB), Kekuléstraße 5, Berlin 12489, Germany.
Appl. Phys. Lett. 116, 064001 (2020)
Article history
Received:
December 18 2019
Accepted:
January 26 2020
Citation
Johannes Lang, Stefan Häußler, Jens Fuhrmann, Richard Waltrich, Sunny Laddha, Jochen Scharpf, Alexander Kubanek, Boris Naydenov, Fedor Jelezko; Long optical coherence times of shallow-implanted, negatively charged silicon vacancy centers in diamond. Appl. Phys. Lett. 10 February 2020; 116 (6): 064001. https://doi.org/10.1063/1.5143014
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