The realization of n-type conduction in directly bottom-up grown Si-doped GaAs nanowires (NWs) by molecular beam epitaxy has remained a long-standing challenge. Unlike the commonly employed vapor–liquid−solid growth, where the amphoteric nature of Si dopants induces p-type conduction, we report a completely catalyst-free, selective area molecular beam epitaxial growth that establishes n-type behavior under Si doping. The vapor–solid selective area growth on prepatterned Si (111) substrates is enabled by an important in situ substrate pretreatment to create an As-terminated 1 × 1-Si(111) substrate necessary for the growth of [111]-oriented GaAs:Si NWs with a large aspect ratio and high yield. Correlated resonant Raman scattering and single-NW micro-photoluminescence (μPL) experiments confirm the n-type nature of the Si-doped GaAs NWs evidenced by a dominant SiGa local vibrational Raman mode, a distinct band filling effect (up to > 10 meV) along with increased PL peak broadening upon increased Si concentration. Excessive Si doping is further found to induce some auto-compensation evidenced by red-shifted PL and the appearance of minor SiAs and SiGa–SiAs pair-like local vibrational Raman modes. Employing excitation power dependent μPL, we further discern signatures in below-gap defect luminescence (∼1.3–1.45 eV) arising from structural defects and Si dopant-point defect complexes.
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3 February 2020
Research Article|
February 04 2020
Demonstration of n-type behavior in catalyst-free Si-doped GaAs nanowires grown by molecular beam epitaxy
Daniel Ruhstorfer
;
Daniel Ruhstorfer
a)
1
Walter Schottky Institut and Physik Department, Technical University of Munich
, Am Coulombwall 4, 85748 Garching, Germany
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Simon Mejia;
Simon Mejia
1
Walter Schottky Institut and Physik Department, Technical University of Munich
, Am Coulombwall 4, 85748 Garching, Germany
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Manfred Ramsteiner
;
Manfred Ramsteiner
2
Paul-Drude-Institut für Festkörperelektronik
, Hausvogteiplatz 5-7, 10117 Berlin, Germany
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Markus Döblinger;
Markus Döblinger
3
Department of Chemistry, Ludwig-Maximilians-University Munich
, Butenandtstr. 5, 81377 Munich, Germany
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Hubert Riedl;
Hubert Riedl
1
Walter Schottky Institut and Physik Department, Technical University of Munich
, Am Coulombwall 4, 85748 Garching, Germany
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Jonathan J. Finley
;
Jonathan J. Finley
1
Walter Schottky Institut and Physik Department, Technical University of Munich
, Am Coulombwall 4, 85748 Garching, Germany
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Gregor Koblmüller
Gregor Koblmüller
a)
1
Walter Schottky Institut and Physik Department, Technical University of Munich
, Am Coulombwall 4, 85748 Garching, Germany
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Daniel Ruhstorfer
1,a)
Simon Mejia
1
Manfred Ramsteiner
2
Markus Döblinger
3
Hubert Riedl
1
Jonathan J. Finley
1
Gregor Koblmüller
1,a)
1
Walter Schottky Institut and Physik Department, Technical University of Munich
, Am Coulombwall 4, 85748 Garching, Germany
2
Paul-Drude-Institut für Festkörperelektronik
, Hausvogteiplatz 5-7, 10117 Berlin, Germany
3
Department of Chemistry, Ludwig-Maximilians-University Munich
, Butenandtstr. 5, 81377 Munich, Germany
a)
Electronic addresses: [email protected] and [email protected]
Appl. Phys. Lett. 116, 052101 (2020)
Article history
Received:
November 01 2019
Accepted:
January 21 2020
Citation
Daniel Ruhstorfer, Simon Mejia, Manfred Ramsteiner, Markus Döblinger, Hubert Riedl, Jonathan J. Finley, Gregor Koblmüller; Demonstration of n-type behavior in catalyst-free Si-doped GaAs nanowires grown by molecular beam epitaxy. Appl. Phys. Lett. 3 February 2020; 116 (5): 052101. https://doi.org/10.1063/1.5134687
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