Silicon quantum photonics provides a promising pathway to realize large-scale quantum photonic integrated circuits (QPICs) by exploiting the power of complementary-metal-oxide-semiconductor (CMOS) technology. Toward scalable operation of such silicon-based QPICs, a straightforward approach is to integrate deterministic single-photon sources (SPSs). To this end, hybrid integration of deterministic solid-state SPSs, such as those based on InAs/GaAs quantum dots (QDs), is highly promising. However, the spectral and spatial randomness inherent in the QDs poses a serious challenge for scalable implementation of multiple identical SPSs on a silicon CMOS chip. To overcome this challenge, we have been investigating a hybrid integration technique called transfer printing, which is based on a pick-and-place operation and allows for the integration of the desired QD SPSs on any locations on the silicon CMOS chips at will. Nevertheless, even in this scenario, in situ fine tuning for perfect wavelength matching among the integrated QD SPSs will be required for interfering photons from dissimilar sources. Here, we demonstrate in situ wavelength tuning of QD SPSs integrated on a CMOS silicon chip. To thermally tune the emission wavelengths of the integrated QDs, we augmented the QD SPSs with optically driven heating pads. The integration of all the necessary elements was performed using transfer printing, which largely simplified the fabrication of the three-dimensional stack of micro/nanophotonic structures. We further demonstrate in situ wavelength matching between two dissimilar QD sources integrated on the same silicon chip. Our transfer-printing-based approach will open the possibility for realizing large-scale QPICs that leverage CMOS technology.
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In situ wavelength tuning of quantum-dot single-photon sources integrated on a CMOS-processed silicon waveguide
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27 January 2020
Research Article|
January 28 2020
In situ wavelength tuning of quantum-dot single-photon sources integrated on a CMOS-processed silicon waveguide
Ryota Katsumi
;
Ryota Katsumi
a)
1
Institute of Industrial Science, The University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
2
Institute for Solid State Physics, The University of Tokyo
, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
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Yasutomo Ota;
Yasutomo Ota
b)
3
Institute for Nano Quantum Information Electronics, The University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Alto Osada;
Alto Osada
3
Institute for Nano Quantum Information Electronics, The University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Takeyoshi Tajiri;
Takeyoshi Tajiri
1
Institute of Industrial Science, The University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Takuto Yamaguchi;
Takuto Yamaguchi
1
Institute of Industrial Science, The University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Masahiro Kakuda;
Masahiro Kakuda
3
Institute for Nano Quantum Information Electronics, The University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Satoshi Iwamoto;
Satoshi Iwamoto
1
Institute of Industrial Science, The University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
3
Institute for Nano Quantum Information Electronics, The University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Hidefumi Akiyama;
Hidefumi Akiyama
2
Institute for Solid State Physics, The University of Tokyo
, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
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Yasuhiko Arakawa
Yasuhiko Arakawa
3
Institute for Nano Quantum Information Electronics, The University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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a)
E-mail: katsumi@iis.u-tokyo.ac.jp
b)
E-mail: ota@iis.u-tokyo.ac.jp
Appl. Phys. Lett. 116, 041103 (2020)
Article history
Received:
September 27 2019
Accepted:
January 17 2020
Citation
Ryota Katsumi, Yasutomo Ota, Alto Osada, Takeyoshi Tajiri, Takuto Yamaguchi, Masahiro Kakuda, Satoshi Iwamoto, Hidefumi Akiyama, Yasuhiko Arakawa; In situ wavelength tuning of quantum-dot single-photon sources integrated on a CMOS-processed silicon waveguide. Appl. Phys. Lett. 27 January 2020; 116 (4): 041103. https://doi.org/10.1063/1.5129325
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