We report the observation at low temperature of a hump in the linear transfer characteristic of a thin film fully depleted silicon-on-insulator transistor when a positive bias is applied on the back gate under the buried oxide. This decrease in the current is correlated with the transition from one-subband to two-subband conduction. Electron mobility measurements and calculations are in good agreement with the occurrence of intersubband scattering in carrier transport in the two-dimensional inversion layer.
Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K
Mikaël Cassé, Bruna Cardoso Paz, Gérard Ghibaudo, Thierry Poiroux, Emmanuel Vincent, Philippe Galy, André Juge, Fred Gaillard, Silvano de Franceschi, Tristan Meunier, Maud Vinet; Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K. Appl. Phys. Lett. 15 June 2020; 116 (24): 243502. https://doi.org/10.1063/5.0007100
Download citation file: