We have investigated the spin–orbit torque-driven magnetization switching in W/CoFeB/MgO Hall bars with perpendicular magnetic anisotropy. He+ ion irradiation through a mask has been used to reduce locally the effective perpendicular anisotropy at a Hall cross. Anomalous Hall effect measurements combined with Kerr microscopy indicate that the switching process is dominated by domain wall (DW) nucleation in the irradiated region followed by rapid domain propagation at a current density as low as 0.8 MA/cm2 with an assisting in-plane magnetic field. Thanks to the implemented strong pinning of the DW at the transition between the irradiated and the non-irradiated region, an intermediate Hall resistance state is induced, which is further verified by finite element simulations. Such a method to control electrically multi-level resistances using He+ ion irradiation shows great potential in realizing neuromorphic and memristor devices.
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15 June 2020
Research Article|
June 15 2020
Spin–orbit torque driven multi-level switching in He+ irradiated W–CoFeB–MgO Hall bars with perpendicular anisotropy
Xiaoxuan Zhao;
Xiaoxuan Zhao
1
Fert Beijing Institute, School of Microelectronics, Beijing Advanced Innovation Center for Big Data and Brain Computing, Beihang University
, 100191 Beijing, China
2
Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay
, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
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Yang Liu
;
Yang Liu
1
Fert Beijing Institute, School of Microelectronics, Beijing Advanced Innovation Center for Big Data and Brain Computing, Beihang University
, 100191 Beijing, China
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Daoqian Zhu
;
Daoqian Zhu
1
Fert Beijing Institute, School of Microelectronics, Beijing Advanced Innovation Center for Big Data and Brain Computing, Beihang University
, 100191 Beijing, China
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Mamour Sall;
Mamour Sall
2
Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay
, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
3
Spin-Ion Technologies
, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
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Xueying Zhang;
Xueying Zhang
1
Fert Beijing Institute, School of Microelectronics, Beijing Advanced Innovation Center for Big Data and Brain Computing, Beihang University
, 100191 Beijing, China
4
Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University
, 266000 Qingdao, China
5
Truth Instrument Co. Ltd.
, 266000 Qingdao, China
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Helin Ma;
Helin Ma
1
Fert Beijing Institute, School of Microelectronics, Beijing Advanced Innovation Center for Big Data and Brain Computing, Beihang University
, 100191 Beijing, China
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Jürgen Langer
;
Jürgen Langer
6
Singulus Technology AG
, Hanauer Landstrasse 103, 63796 Kahl am Main, Germany
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Berthold Ocker
;
Berthold Ocker
6
Singulus Technology AG
, Hanauer Landstrasse 103, 63796 Kahl am Main, Germany
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Samridh Jaiswal
;
Samridh Jaiswal
6
Singulus Technology AG
, Hanauer Landstrasse 103, 63796 Kahl am Main, Germany
7
Institute of Physics, Johannes Gutenberg University Mainz
, 55099 Mainz, Germany
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Gerhard Jakob
;
Gerhard Jakob
7
Institute of Physics, Johannes Gutenberg University Mainz
, 55099 Mainz, Germany
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Mathias Kläui;
Mathias Kläui
7
Institute of Physics, Johannes Gutenberg University Mainz
, 55099 Mainz, Germany
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Weisheng Zhao
;
Weisheng Zhao
a)
1
Fert Beijing Institute, School of Microelectronics, Beijing Advanced Innovation Center for Big Data and Brain Computing, Beihang University
, 100191 Beijing, China
4
Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University
, 266000 Qingdao, China
a)Author to whom correspondence should be addressed: [email protected]
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Dafiné Ravelosona
Dafiné Ravelosona
2
Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay
, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
3
Spin-Ion Technologies
, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
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a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 116, 242401 (2020)
Article history
Received:
April 14 2020
Accepted:
May 29 2020
Citation
Xiaoxuan Zhao, Yang Liu, Daoqian Zhu, Mamour Sall, Xueying Zhang, Helin Ma, Jürgen Langer, Berthold Ocker, Samridh Jaiswal, Gerhard Jakob, Mathias Kläui, Weisheng Zhao, Dafiné Ravelosona; Spin–orbit torque driven multi-level switching in He+ irradiated W–CoFeB–MgO Hall bars with perpendicular anisotropy. Appl. Phys. Lett. 15 June 2020; 116 (24): 242401. https://doi.org/10.1063/5.0010679
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