The impact of byproducts formed on a 4H–SiC(0001) surface by substrate oxidation on the interface state density (Dit) of Al2O3/4H–SiC gate stacks was investigated in this study, because some C-related byproducts are predicted to have defect states near the conduction band minimum (EC) of 4H–SiC. At first, by developing an in situ cyclic metal layer oxidation method, we realized the formation of an Al2O3/4H–SiC gate stack without substrate oxidation, which was verified using conventional X-ray photoelectron spectroscopy (XPS). Then, the amount of byproducts on the 4H–SiC surface was controlled by chemical etching of thermally oxidized 4H–SiC. The results showed that the Dit near the EC of 4H–SiC for the Al2O3/4H–SiC gate stack increased with the amount of byproducts until it fully covered the 4H–SiC surface; thereafter, it did not increase. For the sample with byproducts below the detection limit of XPS, a Dit value as low as 5 × 1011 cm−2 eV−1 at around EC − 0.15 eV of 4H–SiC was obtained.
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1 June 2020
Research Article|
June 04 2020
Impact of byproducts formed on a 4H–SiC surface on interface state density of Al2O3/4H–SiC(0001) gate stacks Available to Purchase
Takuma Doi
;
Takuma Doi
a)
1
Graduate School of Engineering, Nagoya University
, Nagoya 464-8603, Japan
2
National Institute of Advanced Industrial Science and Technology and Nagoya University, GaN Advanced Device Open Innovation Laboratory
, Furo-cho, Chikusa-ku, Nagoya 464-8601, Japan
a)Author to whom correspondence should be addressed: [email protected]
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Shigehisa Shibayama;
Shigehisa Shibayama
b)
1
Graduate School of Engineering, Nagoya University
, Nagoya 464-8603, Japan
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Wakana Takeuchi;
Wakana Takeuchi
1
Graduate School of Engineering, Nagoya University
, Nagoya 464-8603, Japan
3
Aichi Institute of Technology
, Yakusa-cho, Toyota 470-0392, Japan
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Mitsuo Sakashita;
Mitsuo Sakashita
1
Graduate School of Engineering, Nagoya University
, Nagoya 464-8603, Japan
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Noriyuki Taoka;
Noriyuki Taoka
1
Graduate School of Engineering, Nagoya University
, Nagoya 464-8603, Japan
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Mitsuaki Shimizu
;
Mitsuaki Shimizu
2
National Institute of Advanced Industrial Science and Technology and Nagoya University, GaN Advanced Device Open Innovation Laboratory
, Furo-cho, Chikusa-ku, Nagoya 464-8601, Japan
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Osamu Nakatsuka
Osamu Nakatsuka
1
Graduate School of Engineering, Nagoya University
, Nagoya 464-8603, Japan
4
Institute of Materials and Systems for Sustainability, Nagoya University
, Nagoya 464-8601, Japan
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Takuma Doi
1,2,a)
Shigehisa Shibayama
1,b)
Wakana Takeuchi
1,3
Mitsuo Sakashita
1
Noriyuki Taoka
1
Mitsuaki Shimizu
2
Osamu Nakatsuka
1,4
1
Graduate School of Engineering, Nagoya University
, Nagoya 464-8603, Japan
2
National Institute of Advanced Industrial Science and Technology and Nagoya University, GaN Advanced Device Open Innovation Laboratory
, Furo-cho, Chikusa-ku, Nagoya 464-8601, Japan
3
Aichi Institute of Technology
, Yakusa-cho, Toyota 470-0392, Japan
4
Institute of Materials and Systems for Sustainability, Nagoya University
, Nagoya 464-8601, Japan
a)Author to whom correspondence should be addressed: [email protected]
b)
E-mail: [email protected]
Appl. Phys. Lett. 116, 222104 (2020)
Article history
Received:
December 25 2019
Accepted:
May 24 2020
Citation
Takuma Doi, Shigehisa Shibayama, Wakana Takeuchi, Mitsuo Sakashita, Noriyuki Taoka, Mitsuaki Shimizu, Osamu Nakatsuka; Impact of byproducts formed on a 4H–SiC surface on interface state density of Al2O3/4H–SiC(0001) gate stacks. Appl. Phys. Lett. 1 June 2020; 116 (22): 222104. https://doi.org/10.1063/1.5143574
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