Memristor devices have history-dependent charge transport properties that are ideal for neuromorphic computing applications. We reveal a memristor material and mechanism in the layered Mott insulator α-RuCl3. The pinched hysteresis loops and S-shaped negative differential resistance in bulk crystals verify memristor behavior and are attributed to a nonlinear coupling between charge injection over a Schottky barrier at the electrical contacts and concurrent Joule heating. Direct simulations of this coupling can reproduce the device characteristics.
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Research Article| May 04 2020
An interface-controlled Mott memristor in α-RuCl3
Jordan R. Frick;
Paul A. Maggard ;
Jordan R. Frick, Samanvitha Sridhar, Shaun O'Donnell, Paul A. Maggard, Daniel B. Dougherty; An interface-controlled Mott memristor in α-RuCl3. Appl. Phys. Lett. 4 May 2020; 116 (18): 183501. https://doi.org/10.1063/5.0009670
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