Transparent amorphous oxide semiconductors (TAOSs) based transparent thin-film transistors (TTFTs) with high field effect mobility (μFE) are essential for developing advanced flat panel displays. Among TAOSs, amorphous (a-) SnO2 has several advantages against current a-InGaZnO4 such as higher μFE and being indium-free. Although a-SnO2 TTFT has been demonstrated several times, the operation mechanism has not been clarified thus far due to the strong gas sensing characteristics of SnO2. Here we clarify the operation mechanism of a-SnO2 TTFT by electric field thermopower modulation analyses. We prepared a bottom-gate top-contact type TTFT using 4.2-nm-thick a-SnO2 as the channel without any surface passivation. The effective thickness of the conducting channel was ∼1.7 ± 0.4 nm in air and in vacuum, but a large threshold gate voltage shift occurred in different atmospheres; this is attributed to carrier depletion near at the top surface (∼2.5 nm) of the a-SnO2 due to its interaction with the gas molecules and the resulting shift in the Fermi energy. The present results would provide a fundamental design concept to develop a-SnO2 TTFT.
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6 April 2020
Research Article|
April 07 2020
Electric field thermopower modulation analyses of the operation mechanism of transparent amorphous SnO2 thin-film transistor
Dou-dou Liang
;
Dou-dou Liang
a)
1
The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology
Beijing, Beijing 100083, China
2
Research Institute for Electronic Science, Hokkaido University
, N20W10, Kita, Sapporo 001-0020, Japan
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Yu-qiao Zhang
;
Yu-qiao Zhang
2
Research Institute for Electronic Science, Hokkaido University
, N20W10, Kita, Sapporo 001-0020, Japan
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Hai Jun Cho
;
Hai Jun Cho
2
Research Institute for Electronic Science, Hokkaido University
, N20W10, Kita, Sapporo 001-0020, Japan
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Hiromichi Ohta
Hiromichi Ohta
a)
2
Research Institute for Electronic Science, Hokkaido University
, N20W10, Kita, Sapporo 001-0020, Japan
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Appl. Phys. Lett. 116, 143503 (2020)
Article history
Received:
January 30 2020
Accepted:
March 22 2020
Citation
Dou-dou Liang, Yu-qiao Zhang, Hai Jun Cho, Hiromichi Ohta; Electric field thermopower modulation analyses of the operation mechanism of transparent amorphous SnO2 thin-film transistor. Appl. Phys. Lett. 6 April 2020; 116 (14): 143503. https://doi.org/10.1063/5.0003153
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