Anisotropic heat transport in a Ga0.84In0.16N/GaN-heterostructure on a sapphire substrate is observed from microscopic Raman images obtained by utilizing coaxial irradiation of two laser beams, one for heating (325 nm) in the GaInN layer and the other for signal probing (325 nm or 532 nm). The increase in temperatures of the GaInN layer and the underlying GaN layer is probed by the 325-nm and 532-nm lasers, respectively, by analyzing the shift in the Raman peak energy of the higher energy branch of E2 modes. The result reveals that energy diffuses across a considerable length in the GaInN layer, whereas the energy transport in the perpendicular direction to the GaN layer is blocked in the vicinity of misfit dislocations on the heterointerface. This simultaneous irradiation of two lasers for heat generation and probing is effective in the microscopic analysis of energy transport through heterointerfaces.
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Energy transport analysis in a Ga0.84In0.16N/GaN heterostructure using microscopic Raman images employing simultaneous coaxial irradiation of two lasers
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6 April 2020
Research Article|
April 09 2020
Energy transport analysis in a Ga0.84In0.16N/GaN heterostructure using microscopic Raman images employing simultaneous coaxial irradiation of two lasers
Shungo Okamoto;
Shungo Okamoto
1
Graduate School of Electrical and Electronic Engineering, Chiba University
1-33 Yayoicho, Inage-ku, Chiba 263-8522, Japan
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Naomichi Saito;
Naomichi Saito
1
Graduate School of Electrical and Electronic Engineering, Chiba University
1-33 Yayoicho, Inage-ku, Chiba 263-8522, Japan
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Kotaro Ito;
Kotaro Ito
1
Graduate School of Electrical and Electronic Engineering, Chiba University
1-33 Yayoicho, Inage-ku, Chiba 263-8522, Japan
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Bei Ma;
Bei Ma
1
Graduate School of Electrical and Electronic Engineering, Chiba University
1-33 Yayoicho, Inage-ku, Chiba 263-8522, Japan
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Ken Morita
;
Ken Morita
1
Graduate School of Electrical and Electronic Engineering, Chiba University
1-33 Yayoicho, Inage-ku, Chiba 263-8522, Japan
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Daisuke Iida;
Daisuke Iida
2
Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology
, Thuwal 23955-6900, Saudi Arabia
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Kazuhiro Ohkawa;
Kazuhiro Ohkawa
2
Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology
, Thuwal 23955-6900, Saudi Arabia
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Yoshihiro Ishitani
Yoshihiro Ishitani
a)
1
Graduate School of Electrical and Electronic Engineering, Chiba University
1-33 Yayoicho, Inage-ku, Chiba 263-8522, Japan
a)Author to whom correspondence should be addressed: [email protected]
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a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 116, 142107 (2020)
Article history
Received:
February 02 2020
Accepted:
March 19 2020
Citation
Shungo Okamoto, Naomichi Saito, Kotaro Ito, Bei Ma, Ken Morita, Daisuke Iida, Kazuhiro Ohkawa, Yoshihiro Ishitani; Energy transport analysis in a Ga0.84In0.16N/GaN heterostructure using microscopic Raman images employing simultaneous coaxial irradiation of two lasers. Appl. Phys. Lett. 6 April 2020; 116 (14): 142107. https://doi.org/10.1063/5.0003491
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