Carbon nanotubes (CNTs) can be used in many different applications. Field emission (FE) measurements were used together with Raman spectroscopy to show a correlation between the microstructure and field emission parameters. However, field emission characterization does not suffer from fluorescence noise present in Raman spectroscopy. In this study, Raman spectroscopy is used to characterize vertically aligned CNT forest samples based on their D/G band intensity ratio (ID/IG), and FE properties such as the threshold electric field, enhancement coefficient, and anode to CNT tip separation (ATS) at the outset of emission have been obtained. A relationship between ATS at first emission and the enhancement factor, and, subsequently, a relationship between ATS and the ID/IG are shown. Based on the findings, it is shown that a higher enhancement factor (∼3070) results when a lower ID/IG is present (0.45), with initial emissions at larger distances (∼47 μm). For the samples studied, the morphology of the CNT tips did not play an important role; therefore, the field enhancement factor (β) could be directly related to the carbon nanotube structural properties such as breaks in the lattice or amorphous carbon content. Thus, this work presents FE as a complementary tool to evaluate the quality of CNT samples, with the advantages of a larger probe size and an averaging over the whole nanotube length. Correspondingly, one can find the best field emitter CNT according to its ID/IG.
Skip Nav Destination
Field electron emission measurements as a complementary technique to assess carbon nanotube quality
Article navigation
9 March 2020
Research Article|
March 09 2020
Field electron emission measurements as a complementary technique to assess carbon nanotube quality
Mateus G. Masteghin
;
Mateus G. Masteghin
Advanced Technology Institute, Department of Electrical and Electronic Engineering, University of Surrey
, Guildford GU2 7XH, United Kingdom
Search for other works by this author on:
Muhammad Ahmad
;
Muhammad Ahmad
Advanced Technology Institute, Department of Electrical and Electronic Engineering, University of Surrey
, Guildford GU2 7XH, United Kingdom
Search for other works by this author on:
Mehmet O. Tas
;
Mehmet O. Tas
Advanced Technology Institute, Department of Electrical and Electronic Engineering, University of Surrey
, Guildford GU2 7XH, United Kingdom
Search for other works by this author on:
Christopher T. G. Smith
;
Christopher T. G. Smith
Advanced Technology Institute, Department of Electrical and Electronic Engineering, University of Surrey
, Guildford GU2 7XH, United Kingdom
Search for other works by this author on:
Vlad Stolojan
;
Vlad Stolojan
Advanced Technology Institute, Department of Electrical and Electronic Engineering, University of Surrey
, Guildford GU2 7XH, United Kingdom
Search for other works by this author on:
David C. Cox
;
David C. Cox
Advanced Technology Institute, Department of Electrical and Electronic Engineering, University of Surrey
, Guildford GU2 7XH, United Kingdom
Search for other works by this author on:
S. Ravi P. Silva
S. Ravi P. Silva
a)
Advanced Technology Institute, Department of Electrical and Electronic Engineering, University of Surrey
, Guildford GU2 7XH, United Kingdom
a)Author to whom correspondence should be addressed: [email protected]
Search for other works by this author on:
a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 116, 103101 (2020)
Article history
Received:
December 12 2019
Accepted:
February 22 2020
Citation
Mateus G. Masteghin, Muhammad Ahmad, Mehmet O. Tas, Christopher T. G. Smith, Vlad Stolojan, David C. Cox, S. Ravi P. Silva; Field electron emission measurements as a complementary technique to assess carbon nanotube quality. Appl. Phys. Lett. 9 March 2020; 116 (10): 103101. https://doi.org/10.1063/1.5142346
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Superconducting flip-chip devices using indium microspheres on Au-passivated Nb or NbN as under-bump metallization layer
Achintya Paradkar, Paul Nicaise, et al.
Special issue APL organic and hybrid photodetectors
Karl Leo, Canek Fuentes-Hernandez, et al.
Related Content
The mechanism of the surface morphology transformation for the carbon nanotube thin film irradiated via excimer laser
Appl. Phys. Lett. (May 2013)
Complementary response of In 2 O 3 nanowires and carbon nanotubes to low-density lipoprotein chemical gating
Appl. Phys. Lett. (March 2005)
Hybrid-type complementary inverters using semiconducting single walled carbon nanotube networks and In-Ga-Zn-O nanofibers
Appl. Phys. Lett. (December 2018)
Non-Hermitian complementary acoustic metamaterials for lossy barriers
Appl. Phys. Lett. (July 2019)
Few graphene layers/carbon nanotube composites grown at complementary-metal-oxide-semiconductor compatible temperature
Appl. Phys. Lett. (March 2011)