Using ab initio density functional calculations, we study the interfacial properties of the Fe3GeTe2 monolayer in contact with the Au, Cu, In, Cr, Ti, and Ni metal substrates. It is found that Cr, Ti, and Ni bind strongly with Fe3GeTe2, in contrast to Au, Cu, and In. By analyzing the density of states, charge redistribution, and tunneling barrier, it is suggested that the commonly used Au, Cu, In, and Cr electrodes are insufficient for the electron and spin injection. Ti and Ni metal substrates are proposed to have good electronic transparency to the Fe3GeTe2 monolayer. The Ni substrate is found to have a large spin injection to the Fe3GeTe2 monolayer in addition to its excellent electron injection. Our results indicate that Ni is a promising electrode for the Fe3GeTe2 monolayer to form current in-plane devices, thus shedding light on the optimal selection of metal electrodes for the development of next generation spintronic devices based on atomically thin nanomaterials.
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19 August 2019
Research Article|
August 21 2019
Design of metal contacts for monolayer Fe3GeTe2 based devices
Qingyun Wu;
Qingyun Wu
a)
SUTD-MIT International Design Center & Science and Math Cluster, Singapore University of Technology and Design (SUTD)
, 8 Somapah Road, Singapore 487372, Singapore
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Yee Sin Ang
;
Yee Sin Ang
SUTD-MIT International Design Center & Science and Math Cluster, Singapore University of Technology and Design (SUTD)
, 8 Somapah Road, Singapore 487372, Singapore
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Liemao Cao;
Liemao Cao
SUTD-MIT International Design Center & Science and Math Cluster, Singapore University of Technology and Design (SUTD)
, 8 Somapah Road, Singapore 487372, Singapore
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Lay Kee Ang
Lay Kee Ang
b)
SUTD-MIT International Design Center & Science and Math Cluster, Singapore University of Technology and Design (SUTD)
, 8 Somapah Road, Singapore 487372, Singapore
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Appl. Phys. Lett. 115, 083105 (2019)
Article history
Received:
July 03 2019
Accepted:
August 06 2019
Citation
Qingyun Wu, Yee Sin Ang, Liemao Cao, Lay Kee Ang; Design of metal contacts for monolayer Fe3GeTe2 based devices. Appl. Phys. Lett. 19 August 2019; 115 (8): 083105. https://doi.org/10.1063/1.5118304
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