Band engineering of two-dimensional transition metal dichalcogenides (2D TMDCs) is of great significance with regard to both fundamental exploration and practical application. Here we report on a study of the band evolution of monolayer and bilayer TMDCs (WS2, WSe2, and MoS2) under vertical electric fields. Our results show that the electric field has a negligible influence on the bandgaps of monolayer TMDCs. For bilayer TMDCs, our results show that their intralayer direct bandgaps are also immune to the electric field. However, the indirect bandgaps of bilayer TMDCs can be effectively tuned by a vertical electric field. Interestingly, we find that the field tunability of the bandgap in bilayer WSe2 is much larger than those in bilayer WS2 and MoS2.
Band evolution of two-dimensional transition metal dichalcogenides under electric fields
Peng Chen, Cai Cheng, Cheng Shen, Jing Zhang, Shuang Wu, Xiaobo Lu, Shuopei Wang, Luojun Du, Kenji Watanabe, Takashi Taniguchi, Jiatao Sun, Rong Yang, Dongxia Shi, Kaihui Liu, Sheng Meng, Guangyu Zhang; Band evolution of two-dimensional transition metal dichalcogenides under electric fields. Appl. Phys. Lett. 19 August 2019; 115 (8): 083104. https://doi.org/10.1063/1.5093055
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