Spin relaxation properties of π-conjugated organic semiconductors are key indicators of the performance of organic spintronic devices. However, reliable determination of spin relaxation parameters in organic materials is hindered by complex interfacial phenomena at organic/ferromagnetic metal interfaces that couple spin injection with charge injection. Here, we study the spin pumping induced pure spin transport in Permalloy/rubrene/Pt trilayers and determine the spin diffusion length λs = 132 ± 9 nm and the spin relaxation time τs = 3.8 ± 0.5 ms in rubrene films at room temperature by using the inverse spin Hall effect. The determined spin diffusion length λs is found to be almost two times larger than that of ∼46.3 nm at 100 K extracted from rubrene spin valve devices in which charge carrier injection/detection occurs at organic/ferromagnetic metal interfaces. Our results demonstrate experimentally that the efficiency and the rate of spin polarized charge transport through the organic/ferromagnetic metal interface play a dominant role in determining the spin relaxation process of spin valve devices in which charge and spin currents are coupled.
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29 July 2019
Research Article|
August 02 2019
Quantitative study of spin relaxation in rubrene thin films by inverse spin Hall effect
Zhihao Li;
Zhihao Li
a)
1
Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences
, Hefei, Anhui 230031, China
2
School of Materials Science and Chemical Engineering, Anhui Jianzhu University
, Hefei 230601, China
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Tian Li;
Tian Li
a)
1
Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences
, Hefei, Anhui 230031, China
3
National Synchrotron Radiation Laboratory, University of Science and Technology of China
, Hefei, Anhui 230026, China
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Dong-Chen Qi
;
Dong-Chen Qi
4
School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology
, Brisbane, Queensland 4001, Australia
5
Department of Chemistry and Physics, La Trobe Institute for Molecular Science, La Trobe University
, Melbourne, Victoria 3086, Australia
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Wei Tong
;
Wei Tong
1
Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences
, Hefei, Anhui 230031, China
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Liqiang Xu;
Liqiang Xu
1
Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences
, Hefei, Anhui 230031, China
3
National Synchrotron Radiation Laboratory, University of Science and Technology of China
, Hefei, Anhui 230026, China
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Jin Zhu;
Jin Zhu
1
Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences
, Hefei, Anhui 230031, China
3
National Synchrotron Radiation Laboratory, University of Science and Technology of China
, Hefei, Anhui 230026, China
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Zhitao Zhang
;
Zhitao Zhang
1
Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences
, Hefei, Anhui 230031, China
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Hai Xu;
Hai Xu
6
Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences
, Changchun, Jilin 130033, China
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Wenhua Zhang;
Wenhua Zhang
3
National Synchrotron Radiation Laboratory, University of Science and Technology of China
, Hefei, Anhui 230026, China
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Yuxian Guo;
Yuxian Guo
2
School of Materials Science and Chemical Engineering, Anhui Jianzhu University
, Hefei 230601, China
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Feng Chen;
Feng Chen
1
Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences
, Hefei, Anhui 230031, China
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Yuyan Han;
Yuyan Han
1
Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences
, Hefei, Anhui 230031, China
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Liang Cao
;
Liang Cao
b)
1
Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences
, Hefei, Anhui 230031, China
b)Authors to whom correspondence should be addressed: [email protected]; [email protected]; and [email protected]
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Fapei Zhang;
Fapei Zhang
b)
1
Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences
, Hefei, Anhui 230031, China
b)Authors to whom correspondence should be addressed: [email protected]; [email protected]; and [email protected]
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Yimin Xiong
Yimin Xiong
b)
1
Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences
, Hefei, Anhui 230031, China
7
Collaborative Innovation Center of Advanced Microstructures
, Nanjing 210093, China
b)Authors to whom correspondence should be addressed: [email protected]; [email protected]; and [email protected]
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a)
Equal Contributions: Z. Li and T. Li contributed equally to this work.
b)Authors to whom correspondence should be addressed: [email protected]; [email protected]; and [email protected]
Appl. Phys. Lett. 115, 053301 (2019)
Article history
Received:
April 30 2019
Accepted:
July 04 2019
Citation
Zhihao Li, Tian Li, Dong-Chen Qi, Wei Tong, Liqiang Xu, Jin Zhu, Zhitao Zhang, Hai Xu, Wenhua Zhang, Yuxian Guo, Feng Chen, Yuyan Han, Liang Cao, Fapei Zhang, Yimin Xiong; Quantitative study of spin relaxation in rubrene thin films by inverse spin Hall effect. Appl. Phys. Lett. 29 July 2019; 115 (5): 053301. https://doi.org/10.1063/1.5108561
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