Terahertz intersubband absorption of GaN/AlGaN step quantum wells grown by MOVPE on Si(111) and Si(110) substrates

We demonstrate terahertz intersubband absorptions in nitride step quantum wells (SQWs) grown by metal organic vapor phase epitaxy simultaneously on two different substrate orientations [Si(111) and Si(110)]. The structure of the SQWs consists of a 3 nm thick Al_0.1Ga_0.9N barrier, a 3 nm thick GaN well, and an Al_0.05Ga_0.95N step barrier with various thicknesses. This structure design has been optimized to approach a flatband potential in the wells to allow for an intersubband absorption in the terahertz frequency range and to maximize the optical dipole moment. Structural characterizations prove the high quality of the samples. Intersubband absorptions at frequencies of 5.6 THz (λ ≈ 54 μm), 7 THz (43 μm), and 8.9 THz (34 μm) are observed at 77 K on both substrate orientations. The observed absorption frequencies are in excellent agreement with calculations accounting for the depolarization shift induced by the electron concentration in the wells.