Polycrystalline Bi3TaTiO9 (BTTO) thin films of layered perovskite ferroelectric materials were deposited on a Pt/Ta/glass substrate via a pulsed laser deposition (PLD) method using two different PLD deposition rates of 0.03 and 0.5 nm/pulse under the same substrate temperature conditions. The BTTO thin film grown by the low PLD deposition rate exhibited a highly a-oriented crystal structure, which was confirmed by X-ray diffraction experiments. The crystallinity of the a-oriented film caused an improvement in the ferroelectric polarization and piezoelectric coefficients; at the same time, the leakage current characteristics were slightly deteriorated. Ferroelectric field effect transistors (FeFETs), made of monolayer MoS2 channels and BTTO thin films as a gate dielectric layer, exhibited clearly different memory windows as a nonvolatile memory. In addition, the reliability of the FeFETs was confirmed by fatigue tests up to 1012 switching cycles and retention tests up to 106 s.
Characteristics of ferroelectric field effect transistors composed of a ferroelectric Bi3TaTiO9 gate stack and a single-layer MoS2 channel
Hyun Wook Shin, Sung-Hoon Lee, Jong Yeog Son; Characteristics of ferroelectric field effect transistors composed of a ferroelectric Bi3TaTiO9 gate stack and a single-layer MoS2 channel. Appl. Phys. Lett. 9 December 2019; 115 (24): 242902. https://doi.org/10.1063/1.5119770
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