Janus transition metal dichalcogenides with a built-in structural cross-plane asymmetry have recently emerged as a new class of two-dimensional materials with a large cross-plane dipole. By using the density functional theory calculation, we report the formation of different Schottky barriers for Janus PtSSe and graphene based van der Waals heterostructures, where the Schottky barrier height (SBH) and type of contact can be controlled by adjusting the interlayer distance, by applying an external electric field, and by having multiple layers of Janus PtSSe. It is found that the effects of tuning are more prominent for SPtSe/graphene as compared to SePtS/graphene. Besides, a transition from n-type Schottky contact to p-type Schottky contact and to Ohmic contact is also observed in the SPtSe/Gr heterostructure for different SPtSe stackings from 1 layer, to 2- and 3-layers, respectively. Our findings indicate that the SPtSe/graphene heterostructure is a suitable candidate for applications that require a tunable SBH.
Skip Nav Destination
Article navigation
9 December 2019
Research Article|
December 09 2019
Janus PtSSe and graphene heterostructure with tunable Schottky barrier
Liemao Cao
;
Liemao Cao
1
Science and Math Cluster, SUTD-MIT International Design Center, Singapore University of Technology and Design (SUTD)
, 8 Somapah Road, Singapore 487372, Singapore
2
College of Physics and Electronic Engineering, Hengyang Normal University
, Hengyang 421002, China
Search for other works by this author on:
Yee Sin Ang
;
Yee Sin Ang
a)
1
Science and Math Cluster, SUTD-MIT International Design Center, Singapore University of Technology and Design (SUTD)
, 8 Somapah Road, Singapore 487372, Singapore
Search for other works by this author on:
Qingyun Wu;
Qingyun Wu
1
Science and Math Cluster, SUTD-MIT International Design Center, Singapore University of Technology and Design (SUTD)
, 8 Somapah Road, Singapore 487372, Singapore
Search for other works by this author on:
a)
Electronic mail: yeesin_ang@sutd.edu.sg
b)
Electronic mail: ricky_ang@sutd.edu.sg
Appl. Phys. Lett. 115, 241601 (2019)
Article history
Received:
October 07 2019
Accepted:
November 26 2019
Citation
Liemao Cao, Yee Sin Ang, Qingyun Wu, L. K. Ang; Janus PtSSe and graphene heterostructure with tunable Schottky barrier. Appl. Phys. Lett. 9 December 2019; 115 (24): 241601. https://doi.org/10.1063/1.5130756
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Pay-Per-View Access
$40.00
Citing articles via
Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices
Joachim Würfl, Tomás Palacios, et al.
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Feedback cooling of an insulating high-Q diamagnetically levitated plate
S. Tian, K. Jadeja, et al.