We report a giant Rashba-type spin splitting in two-dimensional heterostructure PtSe2/MoSe2 with first-principles calculations. We obtain a large value of spin splitting energy 110 meV at the momentum offset k0 = 0.23 Å−1 around the point, arising from the emerging strong interfacial spin-orbital coupling induced by the hybridization between PtSe2 and MoSe2. Moreover, we find that the band dispersion close to the valence band maximum around the Γ point can be well approximated by the generalized Rashba Hamiltonian . It is found that the generalized Rashba constant in PtSe2/MoSe2 is as large as 1.3 eV⋅Å and, importantly, ηR can be effectively tuned by biaxial strain and external out-of-plane electrical field, presenting a potential application for the spin field-effect transistor (SFET). In addition, with the spin-valley physics at points in monolayer MoSe2, we propose a promising model for SFETs with optovalleytronic spin injection based on a PtSe2/MoSe2 heterostructure.
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11 November 2019
Research Article|
November 11 2019
Tunable giant Rashba-type spin splitting in PtSe2/MoSe2 heterostructure Available to Purchase
Longjun Xiang;
Longjun Xiang
1
School of Physical Science and Technology, ShanghaiTech University
, Shanghai 201210, China
2Shanghai Institute of Optics and Fine Mechanics,
Chinese Academy of Sciences
, Shanghai 201800, China
3
University of Chinese Academy of Sciences
, Beijing 100049, China
Search for other works by this author on:
Youqi Ke;
Youqi Ke
a)
1
School of Physical Science and Technology, ShanghaiTech University
, Shanghai 201210, China
2Shanghai Institute of Optics and Fine Mechanics,
Chinese Academy of Sciences
, Shanghai 201800, China
3
University of Chinese Academy of Sciences
, Beijing 100049, China
Search for other works by this author on:
Qingyun Zhang
Qingyun Zhang
b)
1
School of Physical Science and Technology, ShanghaiTech University
, Shanghai 201210, China
2Shanghai Institute of Optics and Fine Mechanics,
Chinese Academy of Sciences
, Shanghai 201800, China
3
University of Chinese Academy of Sciences
, Beijing 100049, China
Search for other works by this author on:
Longjun Xiang
1,2,3
Youqi Ke
1,2,3,a)
Qingyun Zhang
1,2,3,b)
1
School of Physical Science and Technology, ShanghaiTech University
, Shanghai 201210, China
2Shanghai Institute of Optics and Fine Mechanics,
Chinese Academy of Sciences
, Shanghai 201800, China
3
University of Chinese Academy of Sciences
, Beijing 100049, China
a)
Electronic mail: [email protected]
b)
Electronic mail: [email protected]
Appl. Phys. Lett. 115, 203501 (2019)
Article history
Received:
August 23 2019
Accepted:
October 28 2019
Citation
Longjun Xiang, Youqi Ke, Qingyun Zhang; Tunable giant Rashba-type spin splitting in PtSe2/MoSe2 heterostructure. Appl. Phys. Lett. 11 November 2019; 115 (20): 203501. https://doi.org/10.1063/1.5125303
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