We report a giant Rashba-type spin splitting in two-dimensional heterostructure PtSe2/MoSe2 with first-principles calculations. We obtain a large value of spin splitting energy 110 meV at the momentum offset k0 = 0.23 Å−1 around the point, arising from the emerging strong interfacial spin-orbital coupling induced by the hybridization between PtSe2 and MoSe2. Moreover, we find that the band dispersion close to the valence band maximum around the Γ point can be well approximated by the generalized Rashba Hamiltonian . It is found that the generalized Rashba constant in PtSe2/MoSe2 is as large as 1.3 eV⋅Å and, importantly, ηR can be effectively tuned by biaxial strain and external out-of-plane electrical field, presenting a potential application for the spin field-effect transistor (SFET). In addition, with the spin-valley physics at points in monolayer MoSe2, we propose a promising model for SFETs with optovalleytronic spin injection based on a PtSe2/MoSe2 heterostructure.
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The change of the effective mass m is minor, we use the average value in our estimation.
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