Bipolar plasticity for synaptic emulation of indium gallium zinc oxide thin-film transistors (TFTs) with HfOxNy–HfO2–HfOxNy sandwich-stack films as the gate dielectric was investigated. The postsynaptic current increased when a negative pulse train was applied to the gate of TFTs; when a positive pulse was applied, the postsynaptic current was reduced. This result is discussed based on the charge trapping/releasing process with the assistance of ferroelectric behavior of the enwrapped oxygen-deficient-HfO2 layer. The dual response of this synaptic transistor shows promising prospect in the mimicking of biological neurons.
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