We present electrically detected-magnetic-resonance (EDMR) identification of major and minor interface defects at wet-oxidized 4H-SiC(000)/SiO2 interfaces for C-face 4H-SiC metal-oxide-semiconductor field-effect transistors. The major interface defects are identified as c-axial types of carbon-antisite-carbon-vacancy (CSiVC) defects. Their positive (+1) charge state generates a spin-1/2 EDMR center named “C-face defects” and behaves as an interfacial hole trap. This center is responsible for the effective hydrogen passivation of the C face. We also identify a minor type of interface defect at this interface called “P8 centers,” which appear as spin-1 centers. Judging from their similarity to the P7 centers (divacancies, VSiVC) in SiC, they were assigned to be a sort of basal-type interfacial VSiVC defect. Since both the CSiVC and VSiVC defects are known as promising single photon sources (SPSs) in SiC, the wet oxidation of the C face will have good potential for developing SPSs embedded at SiC surfaces.
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7 October 2019
Research Article|
October 10 2019
Electrically detected-magnetic-resonance identifications of defects at 4H-SiC(000)/SiO2 interfaces with wet oxidation
T. Umeda
;
T. Umeda
a)
1
Institute of Applied Physics, University of Tsukuba
, Tsukuba 305-8573, Japan
a)Author to whom correspondence should be addressed: [email protected]
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Y. Kagoyama;
Y. Kagoyama
1
Institute of Applied Physics, University of Tsukuba
, Tsukuba 305-8573, Japan
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K. Tomita;
K. Tomita
1
Institute of Applied Physics, University of Tsukuba
, Tsukuba 305-8573, Japan
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Y. Abe
;
Y. Abe
1
Institute of Applied Physics, University of Tsukuba
, Tsukuba 305-8573, Japan
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M. Sometani
;
M. Sometani
2
National Institute of Advanced Industrial Science and Technology (AIST)
, Tsukuba 305-8569, Japan
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M. Okamoto
;
M. Okamoto
2
National Institute of Advanced Industrial Science and Technology (AIST)
, Tsukuba 305-8569, Japan
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S. Harada
;
S. Harada
2
National Institute of Advanced Industrial Science and Technology (AIST)
, Tsukuba 305-8569, Japan
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T. Hatakeyama
T. Hatakeyama
2
National Institute of Advanced Industrial Science and Technology (AIST)
, Tsukuba 305-8569, Japan
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a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 115, 151602 (2019)
Article history
Received:
June 22 2019
Accepted:
September 20 2019
Citation
T. Umeda, Y. Kagoyama, K. Tomita, Y. Abe, M. Sometani, M. Okamoto, S. Harada, T. Hatakeyama; Electrically detected-magnetic-resonance identifications of defects at 4H-SiC(000)/SiO2 interfaces with wet oxidation. Appl. Phys. Lett. 7 October 2019; 115 (15): 151602. https://doi.org/10.1063/1.5116170
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