We investigated atomic scale chemical heterogeneity in β-(AlxGa1−x)2O3 thin films with different aluminum (Al) concentrations using atom probe tomography. Two film samples with an Al molar concentration of x = 0.2 and x = 0.5, grown by plasma assisted molecular beam epitaxy, were analyzed and compared. The measured overall compositions were found to be in agreement with the target compositions in both cases. The film with the higher Al content showed a significant chemical heterogeneity, which could be attributed to the low growth temperature.
Topics
Semiconductors
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