We study the influence of He+ irradiation induced interface intermixing on magnetic domain wall (DW) dynamics in W-CoFeB (0.6 nm)-MgO ultrathin films, which exhibit high perpendicular magnetic anisotropy and large Dzyaloshinskii-Moriya interaction (DMI) values. Whereas the pristine films exhibit strong DW pinning, we observe a large increase in the DW velocity in the creep regime upon He+ irradiation, which is attributed to the reduction of pinning centers induced by interface intermixing. Asymmetric in-plane field-driven domain expansion experiments show that the DMI value is slightly reduced upon irradiation, and a direct relationship between DMI and interface anisotropy is demonstrated. Our findings provide insights into the material design and interface control for DW dynamics, as well as for DMI, enabling the development of high-performance spintronic devices based on ultrathin magnetic layers.
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16 September 2019
Research Article|
September 20 2019
Enhancing domain wall velocity through interface intermixing in W-CoFeB-MgO films with perpendicular anisotropy
Xiaoxuan Zhao;
Xiaoxuan Zhao
1
Fert Beijing Institute, School of Microelectronics, Beihang University
, 100191 Beijing, China
2
Centre de Nanosciences et de Nanotechnologies, CNRS, University Paris-Sud, Université Paris-Saclay
, 10 Boulevard Thomas Gobert, 91405 Orsay, France
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Boyu Zhang;
Boyu Zhang
1
Fert Beijing Institute, School of Microelectronics, Beihang University
, 100191 Beijing, China
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Nicolas Vernier;
Nicolas Vernier
2
Centre de Nanosciences et de Nanotechnologies, CNRS, University Paris-Sud, Université Paris-Saclay
, 10 Boulevard Thomas Gobert, 91405 Orsay, France
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Xueying Zhang;
Xueying Zhang
1
Fert Beijing Institute, School of Microelectronics, Beihang University
, 100191 Beijing, China
3
Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University
, 266000 Qingdao, China
4
Truth Instrument Co. Ltd
., 266000 Qingdao, China
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Mamour Sall;
Mamour Sall
2
Centre de Nanosciences et de Nanotechnologies, CNRS, University Paris-Sud, Université Paris-Saclay
, 10 Boulevard Thomas Gobert, 91405 Orsay, France
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Tao Xing;
Tao Xing
1
Fert Beijing Institute, School of Microelectronics, Beihang University
, 100191 Beijing, China
3
Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University
, 266000 Qingdao, China
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Liza Herrera Diez;
Liza Herrera Diez
2
Centre de Nanosciences et de Nanotechnologies, CNRS, University Paris-Sud, Université Paris-Saclay
, 10 Boulevard Thomas Gobert, 91405 Orsay, France
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Carolyna Hepburn;
Carolyna Hepburn
2
Centre de Nanosciences et de Nanotechnologies, CNRS, University Paris-Sud, Université Paris-Saclay
, 10 Boulevard Thomas Gobert, 91405 Orsay, France
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Lin Wang;
Lin Wang
3
Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University
, 266000 Qingdao, China
4
Truth Instrument Co. Ltd
., 266000 Qingdao, China
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Gianfranco Durin;
Gianfranco Durin
5
Instituto Nazionale di Ricerca Metrologica
, Strada delle Cacce 91, 10135 Torino, Italy
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Arianna Casiraghi
;
Arianna Casiraghi
5
Instituto Nazionale di Ricerca Metrologica
, Strada delle Cacce 91, 10135 Torino, Italy
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Mohamed Belmeguenai
;
Mohamed Belmeguenai
6
LSPM (CNRS-UPR 3407), Université Paris 13, Sorbonne Paris Cité
, 99 Avenue Jean-Baptiste Clément, 93430 Villetaneuse, France
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Yves Roussigné
;
Yves Roussigné
6
LSPM (CNRS-UPR 3407), Université Paris 13, Sorbonne Paris Cité
, 99 Avenue Jean-Baptiste Clément, 93430 Villetaneuse, France
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Andrei Stashkevich;
Andrei Stashkevich
6
LSPM (CNRS-UPR 3407), Université Paris 13, Sorbonne Paris Cité
, 99 Avenue Jean-Baptiste Clément, 93430 Villetaneuse, France
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Salim Mourad Chérif;
Salim Mourad Chérif
6
LSPM (CNRS-UPR 3407), Université Paris 13, Sorbonne Paris Cité
, 99 Avenue Jean-Baptiste Clément, 93430 Villetaneuse, France
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Jürgen Langer
;
Jürgen Langer
7
Singulus Technology AG
, Hanauer Landstrasse 103, 63796 Kahl am Main, Germany
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Berthold Ocker
;
Berthold Ocker
7
Singulus Technology AG
, Hanauer Landstrasse 103, 63796 Kahl am Main, Germany
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Samridh Jaiswal
;
Samridh Jaiswal
7
Singulus Technology AG
, Hanauer Landstrasse 103, 63796 Kahl am Main, Germany
8
Institute of Physics, Johannes Gutenberg University Mainz
, 55099 Mainz, Germany
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Gerhard Jakob
;
Gerhard Jakob
8
Institute of Physics, Johannes Gutenberg University Mainz
, 55099 Mainz, Germany
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Mathias Kläui;
Mathias Kläui
8
Institute of Physics, Johannes Gutenberg University Mainz
, 55099 Mainz, Germany
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Weisheng Zhao
;
Weisheng Zhao
a)
1
Fert Beijing Institute, School of Microelectronics, Beihang University
, 100191 Beijing, China
3
Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University
, 266000 Qingdao, China
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Dafiné Ravelosona
Dafiné Ravelosona
a)
2
Centre de Nanosciences et de Nanotechnologies, CNRS, University Paris-Sud, Université Paris-Saclay
, 10 Boulevard Thomas Gobert, 91405 Orsay, France
9
Spin-Ion Technologies
, 10 Boulevard Thomas Gaubert, 91120 Palaiseau, France
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Appl. Phys. Lett. 115, 122404 (2019)
Article history
Received:
July 24 2019
Accepted:
September 02 2019
Citation
Xiaoxuan Zhao, Boyu Zhang, Nicolas Vernier, Xueying Zhang, Mamour Sall, Tao Xing, Liza Herrera Diez, Carolyna Hepburn, Lin Wang, Gianfranco Durin, Arianna Casiraghi, Mohamed Belmeguenai, Yves Roussigné, Andrei Stashkevich, Salim Mourad Chérif, Jürgen Langer, Berthold Ocker, Samridh Jaiswal, Gerhard Jakob, Mathias Kläui, Weisheng Zhao, Dafiné Ravelosona; Enhancing domain wall velocity through interface intermixing in W-CoFeB-MgO films with perpendicular anisotropy. Appl. Phys. Lett. 16 September 2019; 115 (12): 122404. https://doi.org/10.1063/1.5121357
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