We have prepared CuO-based structures including Au/CuO/Pt and Au/CuO/Cu/Pt films and studied the memristive characteristics of the two samples. Current-voltage curves of the samples suggest that both CuO-based films are typical memristive devices, showing conventional pinched hysteresis loops. Furthermore, the presented Au/CuO/Cu/Pt structure with a seed Cu layer between CuO and bottom electrodes Pt demonstrates more typical memristive and better retention characteristics than Au/CuO/Pt. In order to explore the conducting mechanism for improved memristive properties, the electric transport characteristics of the device are analyzed using a space charge limited current and charge trap defect theory.
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