We study the femtosecond carrier dynamics of n-type doped and biaxially strained Ge-on-Si films which occurs upon impulsive photoexcitation by means of broadband near-IR transient absorption spectroscopy. The modeling of the experimental data takes into account the static donor density in a modified rate equation for the description of the temporal recombination dynamics. The measurements confirm the negligible contribution at a high n-type doping concentration, in the 1019 cm−3 range, of Auger processes as compared to defect-related Shockley-Read-Hall recombination. Energy resolved dynamics reveal further insights into the doping-related band structure changes and suggest a reshaping of direct and indirect conduction band valleys to a single effective valley along with a significant spectral broadening of the optical transitions.
References
1.
J.
Liu
, X.
Sun
, D.
Pan
, X.
Wang
, L. C.
Kimerling
, T. L.
Koch
, and J.
Michel
, Opt. Express
15
, 11272
(2007
).2.
J.
Liu
, X.
Sun
, L. C.
Kimerling
, and J.
Michel
, Opt. Lett.
34
, 1738
(2009
).3.
X.
Sun
, J.
Liu
, L. C.
Kimerling
, and J.
Michel
, Opt. Lett.
34
, 1198
(2009
).4.
X.
Sun
, J.
Liu
, L. C.
Kimerling
, and J.
Michel
, Appl. Phys. Lett.
95
, 011911
(2009
).5.
J.
Liu
, X.
Sun
, R.
Camacho-aguilera
, C.
Lionel
, L. C.
Kimerling
, and J.
Michel
, Opt. Lett.
35
, 679
(2010
).6.
M.
Virgilio
, C. L.
Manganelli
, G.
Grosso
, G.
Pizzi
, and G.
Capellini
, Phys. Rev. B
87
, 235313
(2013
).7.
J. M.
Escalante
, Opt. Mater.
79
, 420
(2018
).8.
P.
Boucaud
, M.
El Kurdi
, A.
Ghrib
, M.
Prost
, M.
de Kersauson
, S.
Sauvage
, F.
Aniel
, X.
Checoury
, G.
Beaudoin
, L.
Largeau
, I.
Sagnes
, G.
Ndong
, M.
Chaigneau
, and R.
Ossikovski
, Photonics Res.
1
, 102
(2013
).9.
R.
Geiger
, T.
Zabel
, and H.
Sigg
, Front. Mater.
2
, 52
(2015
).10.
G.
Capellini
, C.
Reich
, S.
Guha
, Y.
Yamamoto
, M.
Lisker
, M.
Virgilio
, A.
Ghrib
, M.
El Kurdi
, P.
Boucaud
, B.
Tillack
, and T.
Schroeder
, Opt. Express
22
, 399
(2014
).11.
A.
Elbaz
, M.
El Kurdi
, A.
Aassime
, S.
Sauvage
, X.
Checoury
, I.
Sagnes
, C.
Baudot
, F.
Boeuf
, and P.
Boucaud
, APL Photonics
3
, 106102
(2018
).12.
S.
Bao
, D.
Kim
, C.
Onwukaeme
, S.
Gupta
, K.
Saraswat
, K. H.
Lee
, Y.
Kim
, D.
Min
, Y.
Jung
, H.
Qiu
, H.
Wang
, E. A.
Fitzgerald
, C. S.
Tan
, and D.
Nam
, Nat. Commun.
8
, 1845
(2017
).13.
G.
Capellini
, M.
De Seta
, P.
Zaumseil
, G.
Kozlowski
, and T.
Schroeder
, J. Appl. Phys.
111
, 073518
(2012
).14.
N.
Higashitarumizu
and Y.
Ishikawa
, Opt. Express
25
, 21286
(2017
).15.
R.
Koerner
, M.
Oehme
, M.
Gollhofer
, M.
Schmid
, K.
Kostecki
, S.
Bechler
, D.
Widmann
, E.
Kasper
, and J.
Schulze
, Opt. Express
23
, 14815
(2015
).16.
L.
Huldt
, Phys. Status Solidi
8
, 173
(1971
).17.
N. G.
Nilsson
, Phys. Scr.
8
, 165
(1973
).18.
E.
Gaubas
and J.
Vanhellemont
, J. Electrochem. Soc.
154
, H231
(2007
).19.
T. T.
Yeh
, H.
Shirai
, C. M.
Tu
, T.
Fuji
, T.
Kobayashi
, and C. W.
Luo
, Sci. Rep.
7
, 40492
(2017
).20.
S.
Dominici
, H.
Wen
, F.
Bertazzi
, M.
Goano
, and E.
Bellotti
, Appl. Phys. Lett.
108
, 211103
(2016
).21.
D. S.
Sukhdeo
, S.
Gupta
, K. C.
Saraswat
, B.
Dutt
, and D.
Nam
, Opt. Commun.
364
, 233
(2016
).22.
M. R.
Barget
, M.
Virgilio
, G.
Capellini
, Y.
Yamamoto
, T.
Schroeder
, M. R.
Barget
, M.
Virgilio
, G.
Capellini
, and Y.
Yamamoto
, J. Appl. Phys.
121
, 245701
(2017
).23.
S. A.
Srinivasan
, C.
Porret
, M.
Pantouvaki
, Y.
Shimura
, P.
Geiregat
, R.
Loo
, J.
Van Campenhout
, and D.
Van Thourhout
, Appl. Phys. Lett.
113
, 161101
(2018
).24.
R.
Geiger
, J.
Frigerio
, M. J.
Süess
, R. A.
Minamisawa
, D.
Chrastina
, G.
Isella
, R.
Spolenak
, J.
Faist
, and H.
Sigg
, Appl. Phys. Lett.
104
, 062106
(2014
).25.
O.
Madelung
, Semiconductors: Data Handbook
(Springer, Berlin, Heidelberg
, 2004
), ISBN: 978-3-642-18865-7.26.
A.
Grupp
, A.
Budweg
, M. P.
Fischer
, J.
Allerbeck
, G.
Soavi
, A.
Leitenstorfer
, and D.
Brida
, J. Opt.
20
, 014005
(2018
).27.
B.
Mayer
, C.
Schmidt
, J.
Bühler
, D. V.
Seletskiy
, D.
Brida
, A.
Pashkin
, and A.
Leitenstorfer
, New J. Phys.
16
, 063033
(2014
).28.
L.
Carroll
, P.
Friedli
, S.
Neuenschwander
, H.
Sigg
, S.
Cecchi
, F.
Isa
, D.
Chrastina
, G.
Isella
, Y.
Fedoryshyn
, and J.
Faist
, Phys. Rev. Lett.
109
, 057402
(2012
).29.
D. T.
Stevenson
and R.
Keyes
, J. Appl. Phys.
26
, 190
(1955
).30.
E.
Gaubas
and J.
Vanhellemont
, Appl. Phys. Lett.
89
, 142106
(2006
).31.
X. Q.
Zhou
, H. M.
Van Driel
, and G.
Mak
, Phys. Rev. B
50
, 5226
(1994
).32.
G.
Mak
and W. W.
Rühle
, Phys. Rev. B
52
, R11584(R)
(1995
).33.
R.
Camacho-Aguilera
, Z.
Han
, Y.
Cai
, L. C.
Kimerling
, and J.
Michel
, Appl. Phys. Lett.
102
, 152106
(2013
).34.
G.
Grzybowski
, R.
Roucka
, J.
Mathews
, L.
Jiang
, R. T.
Beeler
, J.
Kouvetakis
, and J.
Menéndez
, Phys. Rev. B
84
, 205307
(2011
).35.
R.
Conradt
and J.
Aengenheister
, Solid State Commun.
10
, 321
(1972
).36.
J.
Frigerio
, A.
Ballabio
, G.
Isella
, E.
Sakat
, G.
Pellegrini
, P.
Biagioni
, M.
Bollani
, E.
Napolitani
, C.
Manganelli
, M.
Virgilio
, A.
Grupp
, M. P.
Fischer
, D.
Brida
, K.
Gallacher
, D. J.
Paul
, L.
Baldassarre
, P.
Calvani
, V.
Giliberti
, A.
Nucara
, M.
Ortolani
, G.
Pellegrini
, P.
Biagioni
, C.
Manganelli
, V.
Giliberti
, and J.
Frigerio
, Phys. Rev. B
94
, 085202
(2016
).37.
J.
Vanhellemont
and E.
Simoen
, Mater. Sci. Semicond. Process.
15
, 642
(2012
).© 2019 Author(s).
2019
Author(s)
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