Electroluminescence (EL) spectra of hybrid charge transfer states at metal oxide/organic type-II heterojunctions exhibit bias-induced spectral shifts. The reasons for this phenomenon have been discussed controversially and arguments for either electric field-induced effects or the filling of trap states at the oxide surface have been put forward. Here, we combine the results of EL and photovoltaic measurements to eliminate the unavoidable effect of the series resistance of inorganic and organic components on the total voltage drop across the hybrid device. For SnOx combined with the conjugated polymer [ladder type poly-(para-phenylene)], we find a one-to-one correspondence between the blueshift of the EL peak and the increase of the quasi-Fermi level splitting at the hybrid heterojunction, which we unambiguously assign to state filling. Our data are resembled best by a model considering the combination of an exponential density of states with a doped semiconductor.
Skip Nav Destination
Direct observation of state-filling at hybrid tin oxide/organic interfaces
Article navigation
6 May 2019
Research Article|
May 06 2019
Direct observation of state-filling at hybrid tin oxide/organic interfaces
Ulrich Hörmann
;
Ulrich Hörmann
a)
1
Institute of Physics and Astronomy, University of Potsdam
, 14476 Potsdam, Germany
a)Authors to whom correspondence should be addressed: ulrich.hoermann@uni-potsdam.de and neher@uni-potsdam.de
Search for other works by this author on:
Stefan Zeiske;
Stefan Zeiske
1
Institute of Physics and Astronomy, University of Potsdam
, 14476 Potsdam, Germany
Search for other works by this author on:
Soohyung Park
;
Soohyung Park
2
Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin
, 12489 Berlin, Germany
3
Helmholtz-Zentrum für Materialien und Energie GmbH, Bereich Solarenergieforschung
, 14109 Berlin, Germany
Search for other works by this author on:
Thorsten Schultz
;
Thorsten Schultz
2
Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin
, 12489 Berlin, Germany
Search for other works by this author on:
Sebastian Kickhöfel;
Sebastian Kickhöfel
2
Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin
, 12489 Berlin, Germany
Search for other works by this author on:
Ullrich Scherf
;
Ullrich Scherf
4
Macromolecular Chemistry Group, University of Wuppertal
, 42119 Wuppertal, Germany
Search for other works by this author on:
Sylke Blumstengel
;
Sylke Blumstengel
2
Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin
, 12489 Berlin, Germany
Search for other works by this author on:
Norbert Koch
;
Norbert Koch
2
Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin
, 12489 Berlin, Germany
3
Helmholtz-Zentrum für Materialien und Energie GmbH, Bereich Solarenergieforschung
, 14109 Berlin, Germany
Search for other works by this author on:
Dieter Neher
Dieter Neher
a)
1
Institute of Physics and Astronomy, University of Potsdam
, 14476 Potsdam, Germany
a)Authors to whom correspondence should be addressed: ulrich.hoermann@uni-potsdam.de and neher@uni-potsdam.de
Search for other works by this author on:
a)Authors to whom correspondence should be addressed: ulrich.hoermann@uni-potsdam.de and neher@uni-potsdam.de
Appl. Phys. Lett. 114, 183301 (2019)
Article history
Received:
November 23 2018
Accepted:
April 19 2019
Citation
Ulrich Hörmann, Stefan Zeiske, Soohyung Park, Thorsten Schultz, Sebastian Kickhöfel, Ullrich Scherf, Sylke Blumstengel, Norbert Koch, Dieter Neher; Direct observation of state-filling at hybrid tin oxide/organic interfaces. Appl. Phys. Lett. 6 May 2019; 114 (18): 183301. https://doi.org/10.1063/1.5082704
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Could not validate captcha. Please try again.
Sign in via your Institution
Sign in via your InstitutionPay-Per-View Access
$40.00
Citing articles via
Related Content
Indium tin oxide-free transparent and conductive electrode based on SnOx | Ag | SnOx for organic solar cells
J. Appl. Phys. (July 2014)
Ultrafast carrier dynamics in SnOx thin films
Appl. Phys. Lett. (March 2015)
Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
Journal of Vacuum Science & Technology A (December 2017)
Ambipolar SnOx thin-film transistors achieved at high sputtering power
Appl. Phys. Lett. (May 2018)
Physical properties of SnOx films
Journal of Applied Physics (January 1985)