We demonstrate charge trapping memory devices comprising aluminum oxide phosphate (ALPO) blocking/indium gallium zinc oxide charge-trapping/ALPO tunneling layers with a bottom-gated architecture fabricated by sol-gel process technique at temperatures as low as 300 °C. The memory device offers a large memory hysteresis of 13.5 V in the IdVg curve when the gate voltage is swept from −20 to +30 V and back. The true program-erase (P/E) window of 7 V is established for the P/E square pulse of ±20 V s−1. Good retention characteristic is confirmed within the experimental limit of 104 s. The P/E mechanism is illustrated by the complete band structure of the memory devices. We also demonstrate a control device without a charge trapping layer, which shows excellent thin film transistor characteristics.

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