We report the fabrication of a bidirectional selector based on threshold switching (TS) material AlxTe1−x. By modulating the composition and the thickness of the AlxTe1−x film layer, an optimized bidirectional selector with the advantages of being electroforming-free, with sufficient operating current (1 mA), satisfactory selectivity (ca. 5.9 × 103), appropriately small threshold voltage (ca. ±0.7 V), and excellent switching uniformity was fabricated. The trap-limited conduction model was employed to explain the TS characteristics of the W/AlxTe1−x/W device. The application of a high electric field to the devices is considered to induce the tunneling of the high-electric field-derived carriers from deep traps to shallow traps, switching the device to the on-state.
References
1.
R.
Waser
and M.
Aono
, Nat. Mater.
6
(11
), 833
(2007
).2.
A.
Sawa
, Mater. Today
11
, 28
(2008
).3.
T.
Hasegawa
, K.
Terabe
, T.
Tsuruoka
, and M.
Aono
, Adv. Mater.
24
, 252
(2012
).4.
M.
Lee
, C. B.
Lee
, D.
Lee
, S. R.
Lee
, M.
Chang
, J. H.
Hur
, Y.
Kim
, C.
Kim
, D. H.
Seo
, S.
Seo
, U.
Chung
, I.
Yoo
, and K.
Kim
, Nat. Mater.
10
, 625
(2011
).5.
J. J.
Yang
, M. X.
Zhang
, J. P.
Strachan
, F.
Miao
, M. D.
Pickett
, R. D.
Kelley
, G.
Medeiros-Ribeiro
, and R. S.
Williams
, Appl. Phys. Lett.
97
, 232102
(2010
).6.
L.
Cario
, C.
Vaju
, B.
Corraze
, V.
Guiot
, and E.
Janod
, Adv. Mater.
22
, 5193
(2010
).7.
C.
Cheng
, F.
Yeh
, and A.
Chin
, Adv. Mater.
23
, 902
(2011
).8.
L.
Chen
, Y.
Xu
, Q.
Sun
, P.
Zhou
, P.
Wang
, S.
Ding
, and D. W.
Zhang
, IEEE Electron Device Lett.
31
, 1296
(2010
).9.
10.
J. Y.
Seok
, S. J.
Song
, J. H.
Yoon
, K. J.
Yoon
, T. H.
Park
, D. E.
Kwon
, H.
Lim
, G. H.
Kim
, D. S.
Jeong
, and C. S.
Hwang
, Adv. Funct. Mater.
24
(34
), 5316
(2014
).11.
F.
Pan
, S.
Gao
, C.
Chen
, C.
Song
, and F.
Zeng
, Mater. Sci. Eng. R: Rep.
83
, 1
–59
(2014
).12.
G.
Burr
, K.
Virwani
, R. S.
Shenoy
, and A.
Padilla
, in VLSI Technology IEEE
(2012
).13.
R. S.
Shenoy
, G. W.
Burr
, K.
Virwani
, B.
Jackson
, A.
Padilla
, P.
Narayanan
, C. T.
Rettner
, R. M.
Shelby
, D. S.
Bethune
, and K. V.
Raman
, Semicond. Sci. Technol.
29
(10
), 104005
(2014
).14.
E.
Cha
, J.
Park
, J.
Woo
, D.
Lee
, A.
Prakash
, and H.
Hwang
, Appl. Phys. Lett.
108
(15
), 153502
(2016
).15.
X.
Liu
, S. K.
Nandi
, D. K.
Venkatachalam
, K.
Belay
, S.
Song
, and R. G.
Elliman
, IEEE Electron Device Lett.
35
(10
), 1055
(2014
).16.
S. H.
Jo
, T.
Kumar
, S.
Narayanan
, W. D.
Lu
, and H.
Nazarian
, in IEEE International Electron Devices Meeting (IEDM)
(2014
).17.
S. H.
Jo
, T.
Kumar
, S.
Narayanan
, and H.
Nazarian
, IEEE Trans. Electron Devices
62
(11
), 3477
(2015
).18.
R.
Midya
, Z.
Wang
, J.
Zhang
, S. E.
Savel'ev
, C.
Li
, M.
Rao
, M. H.
Jang
, S.
Joshi
, H.
Jiang
, P.
Lin
, K.
Norris
, N.
Ge
, Q.
Wu
, M.
Barnell
, Z.
Li
, H. L.
Xin
, R. S.
Williams
, Q.
Xia
, and J. J.
Yang
, Adv. Mater.
29
(12
), 1604457
(2017
).19.
X.
Zhao
, J.
Ma
, X.
Xiao
, Q.
Liu
, L.
Shao
, D.
Chen
, S.
Liu
, J.
Niu
, X.
Zhang
, Y.
Wang
, R.
Cao
, W.
Wang
, Z.
Di
, H.
Lv
, S.
Long
, and M.
Liu
, Adv. Mater.
30
, 1705193
(2018
).20.
J.
Song
, J.
Woo
, A.
Prakash
, D.
Lee
, and H.
Hwang
, IEEE Electron Device Lett.
36
(7
), 681
(2015
).21.
Q.
Luo
, X.
Xu
, and H.
Lv
, in IEEE International Electron Devices Meeting (IEDM)
(2016
).22.
J.
Yoo
, J.
Woo
, J.
Song
, and H.
Hwang
, AIP Adv.
5
(12
), 127221
(2015
).23.
A.
Bricalli
, E.
Ambrosi
, M.
Laudato
, M.
Maestro
, and A.
Bricalli
, in IEEE International Electron Devices Meeting (IEDM)
(2016
).24.
M.
Anbarasu
, M.
Wimmer
, G.
Bruns
, and M.
Salinga
, Appl. Phys. Lett.
100
(14
), 043108
(2012
).25.
T.
Gao
, J.
Feng
, H.
Ma
, and X.
Zhu
, Appl. Phys. A
124
(11
), 734
(2018
).26.
S.
Kim
, H. D.
Kim
, and S. J.
Choi
, J. Alloys Compd.
667
, 91
(2016
).27.
J. H.
Lee
, G. H.
Kim
, Y. B.
Ahn
, J. W.
Park
, S. W.
Ryu
, C. S.
Hwang
, and H. J.
Kim
, Appl. Phys. Lett.
100
(12
), 123505
(2012
).28.
Y. S.
Kim
, J. W.
Park
, J. H.
Lee
, I. A.
Choi
, J.
Heo
, and H. J.
Kim
, Appl. Phys. Lett.
111
, 183501
(2017
).29.
S.
Murugavel
and S.
Asokan
, Mod. Phys. Lett. B
14
(24
), 843
(1998
).30.
Pumlianmunga
and K.
Ramesh
, Mater. Res. Bull.
86
, 88
(2017
).31.
S.
Murugavel
and S.
Asokan
, J. Mater. Res.
13
(10
), 2982
(1998
).32.
D.
Adler
, M. S.
Shur
, M.
Silver
, and S. R.
Ovshinsky
, J. Appl. Phys.
51
, 3289
(1980
).33.
Pumlianmunga
and K.
Ramesh
, J. Non-Cryst. Solids
452
, 253
(2016
).34.
Y.
Koo
, S.
Lee
, S.
Park
, M.
Yang
, and H.
Hwang
, IEEE Electron Device Lett.
38
(5
), 568
(2017
).35.
S.
Kim
, Y. B.
Kim
, K. M.
Kim
, S. J.
Kim
, S. R.
Lee
, M.
Chang
, E.
Cho
, M. J.
Lee
, D.
Lee
, C. J.
Kim
, U. I.
Chung
, and I. K.
Yoo
, in VLSI Technology IEEE
(2013
).36.
D.
Ielmini
and Y.
Zhang
, J. Appl. Phys.
102
(5
), 054517
(2007
).37.
S.
Prakash
, S.
Asokan
, and D. B.
Ghare
, IEEE Electron Device Lett.
18
(2
), 45
(1997
).38.
R.
Fairman
and B.
Ushkov
, Semiconducting Chalcogenide Glass II: Properties of Chalcogenide Glasses
(Elsevier
, Academic, San Diego, California
, 2004
).39.
B. J.
Choi
, A. B. K.
Chen
, X.
Yang
, and I. W.
Chen
, Adv. Mater.
23
, 3847
(2011
).© 2019 Author(s).
2019
Author(s)
You do not currently have access to this content.
