The contact resistance at two-dimensional graphene/MoS2 lateral heterojunctions is theoretically studied, using first-principles simulations based on density functional theory and the nonequilibrium Green's function method. The computed contact resistance lies in the range of 102 to 104 Ω μm, depending on the contact edge symmetry (armchair or zigzag) and termination (Mo and/or S terminated). This large variation in the contact resistance arises from the variation in the interface barrier height, which is sensitive to the presence of polar C-Mo bonds or sulfur dangling bonds at the interface. These results highlight that the control of the edge symmetry and/or edge termination is crucial to achieve a low contact resistance (in the range of a few hundred ohms micrometer) at graphene/MoS2 lateral heterojunctions for 2D material-based field-effect devices.
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22 April 2019
Research Article|
April 23 2019
Contact resistance at graphene/MoS2 lateral heterostructures
M. Houssa
;
M. Houssa
a)
1
Department of Physics and Astronomy, University of Leuven
, B-3001 Leuven, Belgium
a)Author to whom correspondence should be addressed: [email protected].
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K. Iordanidou;
K. Iordanidou
2
Department of Physics, University of Oslo
, NO-0316 Oslo, Norway
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A. Dabral;
A. Dabral
1
Department of Physics and Astronomy, University of Leuven
, B-3001 Leuven, Belgium
3
imec
, Kapeldreef 75, B-3001 Leuven, Belgium
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R. Meng;
R. Meng
1
Department of Physics and Astronomy, University of Leuven
, B-3001 Leuven, Belgium
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G. Pourtois;
G. Pourtois
3
imec
, Kapeldreef 75, B-3001 Leuven, Belgium
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V. V. Afanas'ev
;
V. V. Afanas'ev
1
Department of Physics and Astronomy, University of Leuven
, B-3001 Leuven, Belgium
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A. Stesmans
A. Stesmans
1
Department of Physics and Astronomy, University of Leuven
, B-3001 Leuven, Belgium
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a)Author to whom correspondence should be addressed: [email protected].
Appl. Phys. Lett. 114, 163101 (2019)
Article history
Received:
November 28 2018
Accepted:
April 11 2019
Citation
M. Houssa, K. Iordanidou, A. Dabral, A. Lu, R. Meng, G. Pourtois, V. V. Afanas'ev, A. Stesmans; Contact resistance at graphene/MoS2 lateral heterostructures. Appl. Phys. Lett. 22 April 2019; 114 (16): 163101. https://doi.org/10.1063/1.5083133
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