To determine the density of states distribution of traps within a semiconductor, the thermally stimulated current (TSC) method is often applied. However, the bipolar nature of the typical device structure does not allow for strict unipolar operation, and therefore the method does not allow for the separate evaluation of electron and hole traps. The recombination between electrons and holes makes the interpretation of the data difficult, which becomes an essential drawback of this method. To address these issues, we propose the use of a metal insulator semiconductor (MIS) device structure for TSC measurements, which can be operated strictly unipolar by the sign of the applied voltage during the charging process. Thus, the problem of recombination and bipolar contribution to the measurement signal is avoided. As an additional benefit, the MIS device structure typically results in very low leakage currents, and thus a low noise level for the measurement. This permits precise measurements even below 1 pA, and consequently increases the resolution of the method. This aspect is especially important for fractional TSC, as the measurement time is long and the current low when compared to the envelope measurement. Here, we demonstrate the basic principle of this TSC approach, which we name MIS-TSC, using the well-studied organic semiconductor P3HT as a benchmark.
MIS-TSC: A combination of the thermally stimulated current method and a metal-insulator-semiconductor device for unipolar trap spectroscopy
Karsten Rojek, Roland Schmechel, Niels Benson; MIS-TSC: A combination of the thermally stimulated current method and a metal-insulator-semiconductor device for unipolar trap spectroscopy. Appl. Phys. Lett. 15 April 2019; 114 (15): 152104. https://doi.org/10.1063/1.5090947
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