Numerous applications call for electronics capable of operation at high temperatures where conventional Si-based electrical devices fail. In this work, we show that graphene-based devices are capable of performing in an extended temperature range up to 500 °C without noticeable thermally induced degradation when encapsulated by hexagonal boron nitride (hBN). The performance of these devices near the neutrality point is dominated by thermal excitations at elevated temperatures. Non-linearity pronounced in electric field-mediated resistance of the aligned graphene/hBN allowed us to realize heterodyne signal mixing at temperatures comparable to that of the Venus atmosphere (∼460 °C).
References
1.
J.
Watson
and G.
Castro
, “A review of high-temperature electronics technology and applications
,” J. Mater. Sci.: Mater. Electron.
26
, 9226
–9235
(2015
).2.
A. K.
Geim
and I. V.
Grigorieva
, “Van der waals heterostructures
,” Nature
499
, 419
–425
(2013
).3.
K. S.
Novoselov
, A.
Mishchenko
, A.
Carvalho
, and A. H. C.
Neto
, “2D materials and van der waals heterostructures
,” Science
353
, aac9439
(2016
).4.
K. S.
Novoselov
, A. K.
Geim
, S. V.
Morozov
, D.
Jiang
, Y.
Zhang
, S. V.
Dubonos
, I. V.
Grigorieva
, and A. A.
Firsov
, “Electric field effect in atomically thin carbon films
,” Science
306
, 666
–669
(2004
).5.
K. S.
Novoselov
, A. K.
Geim
, S. V.
Morozov
, D.
Jiang
, M. I.
Katsnelson
, I. V.
Grigorieva
, S. V.
Dubonos
, and A. A.
Firsov
, “Two-dimensional gas of massless Dirac fermions in graphene
,” Nature
438
, 197
–200
(2005
).6.
C.
Lee
, X.
Wei
, J. W.
Kysar
, and J.
Hone
, “Measurement of the elastic properties and intrinsic strength of monolayer graphene
,” Science
321
, 385
–388
(2008
).7.
C. R.
Dean
, A. F.
Young
, I.
Meric
, C.
Lee
, L.
Wang
, S.
Sorgenfrei
, K.
Watanabe
, T.
Taniguchi
, P.
Kim
, K. L.
Shepard
, and J.
Hone
, “Boron nitride substrates for high-quality graphene electronics
,” Nat. Nanotechnol.
5
, 722
–726
(2010
).8.
L.
Wang
, I.
Meric
, P. Y.
Huang
, Q.
Gao
, Y.
Gao
, H.
Tran
, T.
Taniguchi
, K.
Watanabe
, L. M.
Campos
, D. A.
Muller
, J.
Guo
, P.
Kim
, J.
Hone
, K. L.
Shepard
, and C. R.
Dean
, “One-dimensional electrical contact to a two-dimensional material
,” Science
342
, 614
–617
(2013
).9.
Z.
Liu
, Y.
Gong
, W.
Zhou
, L.
Ma
, J.
Yu
, J. C.
Idrobo
, J.
Jung
, A. H.
MacDonald
, R.
Vajtai
, J.
Lou
, and P. M.
Ajayan
, “Ultrathin high-temperature oxidation-resistant coatings of hexagonal boron nitride
,” Nat. Commun.
4
, 2541
(2013
).10.
L.
Shen
, Y.
Zhao
, Y.
Wang
, R.
Song
, Q.
Yao
, S.
Chen
, and Y.
Chai
, “A long-term corrosion barrier with an insulating boron nitride monolayer
,” J. Mater. Chem. A
4
, 5044
–5050
(2016
).11.
M.
Yi
, Z.
Shen
, X.
Zhao
, S.
Liang
, and L.
Liu
, “Boron nitride nanosheets as oxygen-atom corrosion protective coatings
,” Appl. Phys. Lett.
104
, 143101
(2014
).12.
J. H.
Los
, K. V.
Zakharchenko
, M. I.
Katsnelson
, and A.
Fasolino
, “Melting temperature of graphene
,” Phys. Rev. B
91
, 045415
(2015
).13.
S.-K.
Son
, M.
Šiškins
, C.
Mullan
, J.
Yin
, V. G.
Kravets
, A.
Kozikov
, S.
Ozdemir
, M.
Alhazmi
, M.
Holwill
, K.
Watanabe
, T.
Taniguchi
, D.
Ghazaryan
, K. S.
Novoselov
, V. I.
Fal'ko
, and A.
Mishchenko
, “Graphene hot-electron light bulb: Incandescence from hBN-encapsulated graphene in air
,” 2D Mater.
5
, 011006
(2017
).14.
Y. D.
Kim
, Y.
Gao
, R.-J.
Shiue
, L.
Wang
, O. B.
Aslan
, M.-H.
Bae
, H.
Kim
, D.
Seo
, H.-J.
Choi
, S. H.
Kim
, A.
Nemilentsau
, T.
Low
, C.
Tan
, D. K.
Efetov
, T.
Taniguchi
, K.
Watanabe
, K. L.
Shepard
, T. F.
Heinz
, D.
Englund
, and J.
Hone
, “Ultrafast graphene light emitters
,” Nano Lett.
18
, 934
–940
(2018
).15.
H. R.
Barnard
, E.
Zossimova
, N. H.
Mahlmeister
, L. M.
Lawton
, I. J.
Luxmoore
, and G. R.
Nash
, “Boron nitride encapsulated graphene infrared emitters
,” Appl. Phys. Lett.
108
, 131110
(2016
).16.
Y.
Yin
, Z.
Cheng
, L.
Wang
, K.
Jin
, and W.
Wang
, “Graphene, a material for high temperature devices—intrinsic carrier density, carrier drift velocity and lattice energy
,” Sci. Rep.
4
, 5758
(2014
).17.
P. G.
Neudeck
, R. D.
Meredith
, L.
Chen
, D. J.
Spry
, L. M.
Nakley
, and G. W.
Hunter
, “Prolonged silicon carbide integrated circuit operation in venus surface atmospheric conditions
,” AIP Adv.
6
, 125119
(2016
).18.
A.
Castellanos-Gomez
, M.
Buscema
, R.
Molenaar
, V.
Singh
, L.
Janssen
, H. S. J.
van der Zant
, and G. A.
Steele
, “Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping
,” 2D Mater.
1
, 011002
(2014
).19.
A.
Mishchenko
, J. S.
Tu
, Y.
Cao
, R. V.
Gorbachev
, J. R.
Wallbank
, M. T.
Greenaway
, V. E.
Morozov
, S. V.
Morozov
, M. J.
Zhu
, S. L.
Wong
, F.
Withers
, C. R.
Woods
, Y.-J.
Kim
, K.
Watanabe
, T.
Taniguchi
, E. E.
Vdovin
, O.
Makarovsky
, T. M.
Fromhold
, V. I.
Fal'ko
, A. K.
Geim
, L.
Eaves
, and K. S.
Novoselov
, “Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures
,” Nat. Nanotechnol.
9
, 808
–813
(2014
).20.
W.
Paszkowicz
, J.
Pelka
, M.
Knapp
, T.
Szyszko
, and S.
Podsiadlo
, “Lattice parameters and anisotropic thermal expansion of hexagonal boron nitride in the 10-297.5 K temperature range
,” Appl. Phys. A: Mater. Sci. Process.
75
, 431
–435
(2002
).21.
L.
Britnell
, R. V.
Gorbachev
, R.
Jalil
, B. D.
Belle
, F.
Schedin
, A.
Mishchenko
, T.
Georgiou
, M. I.
Katsnelson
, L.
Eaves
, S. V.
Morozov
, N. M. R.
Peres
, J.
Leist
, A. K.
Geim
, K. S.
Novoselov
, and L. A.
Ponomarenko
, “Field-effect tunneling transistor based on vertical graphene heterostructures
,” Science
335
, 947
–950
(2012
).22.
A. C.
Ferrari
, “Raman spectroscopy of graphene and graphite: Disorder, electron–phonon coupling, doping and nonadiabatic effects
,” Solid State Commun.
143
, 47
–57
(2007
).23.
C.
Neumann
, S.
Reichardt
, P.
Venezuela
, M.
Drögeler
, L.
Banszerus
, M.
Schmitz
, K.
Watanabe
, T.
Taniguchi
, F.
Mauri
, B.
Beschoten
, S. V.
Rotkin
, and C.
Stampfer
, “Raman spectroscopy as probe of nanometre-scale strain variations in graphene
,” Nat. Commun.
6
, 8429
(2015
).24.
J.
Crossno
, J. K.
Shi
, K.
Wang
, X.
Liu
, A.
Harzheim
, A.
Lucas
, S.
Sachdev
, P.
Kim
, T.
Taniguchi
, K.
Watanabe
, T. A.
Ohki
, and K. C.
Fong
, “Observation of the Dirac fluid and the breakdown of the Wiedemann-Franz law in graphene
,” Science
351
, 1058
–1061
(2016
).25.
S.
Luryi
, “Quantum capacitance devices
,” Appl. Phys. Lett.
52
, 501
–503
(1988
).26.
H.
Xu
, Z.
Zhang
, and L.-M.
Peng
, “Measurements and microscopic model of quantum capacitance in graphene
,” Appl. Phys. Lett.
98
, 133122
(2011
).27.
J.
Xia
, F.
Chen
, J.
Li
, and N.
Tao
, “Measurement of the quantum capacitance of graphene
,” Nat. Nanotechnol.
4
, 505
–509
(2009
).28.
M.
Yankowitz
, J.
Xue
, D.
Cormode
, J. D.
Sanchez-Yamagishi
, K.
Watanabe
, T.
Taniguchi
, P.
Jarillo-Herrero
, P.
Jacquod
, and B. J.
LeRoy
, “Emergence of superlattice Dirac points in graphene on hexagonal boron nitride
,” Nat. Phys.
8
, 382
–386
(2012
).29.
S.
Mann
, R.
Kumar
, and V. K.
Jindal
, “Negative thermal expansion of pure and doped graphene
,” RSC Adv.
7
, 22378
–22387
(2017
).30.
L. A.
Ponomarenko
, R. V.
Gorbachev
, G. L.
Yu
, D. C.
Elias
, R.
Jalil
, A. A.
Patel
, A.
Mishchenko
, A. S.
Mayorov
, C. R.
Woods
, J. R.
Wallbank
, M.
Mucha-Kruczynski
, B. A.
Piot
, M.
Potemski
, I. V.
Grigorieva
, K. S.
Novoselov
, F.
Guinea
, V. I.
Fal'ko
, and A. K.
Geim
, “Cloning of Dirac fermions in graphene superlattices
,” Nature
497
, 594
–597
(2013
).31.
A. D.
Sanctis
, J. D.
Mehew
, S.
Alkhalifa
, F.
Withers
, M. F.
Craciun
, and S.
Russo
, “Strain-engineering of twist-angle in graphene/hBN superlattice devices
,” Nano Lett.
18
, 7919
–7926
(2018
).32.
D. A.
Cosma
, J. R.
Wallbank
, V.
Cheianov
, and V. I.
Fal'ko
, “Moiré pattern as a magnifying glass for strain and dislocations in van der Waals heterostructures
,” Faraday Discuss.
173
, 137
–143
(2014
).33.
L.
Wang
, S.
Zihlmann
, M.-H.
Liu
, P.
Makk
, K.
Watanabe
, T.
Taniguchi
, A.
Baumgartner
, and C.
Schönenberger
, “New generation of Moiré superlattices in doubly aligned hBN/graphene/hBN heterostructures
,” Nano Lett.
(published online 2019).34.
Y.-M.
Lin
, A.
Valdes-Garcia
, S.-J.
Han
, D. B.
Farmer
, I.
Meric
, Y.
Sun
, Y.
Wu
, C.
Dimitrakopoulos
, A.
Grill
, P.
Avouris
, and K. A.
Jenkins
, “Wafer-scale graphene integrated circuit
,” Science
332
, 1294
–1297
(2011
).© 2019 Author(s).
2019
Author(s)
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