Numerous applications call for electronics capable of operation at high temperatures where conventional Si-based electrical devices fail. In this work, we show that graphene-based devices are capable of performing in an extended temperature range up to 500 °C without noticeable thermally induced degradation when encapsulated by hexagonal boron nitride (hBN). The performance of these devices near the neutrality point is dominated by thermal excitations at elevated temperatures. Non-linearity pronounced in electric field-mediated resistance of the aligned graphene/hBN allowed us to realize heterodyne signal mixing at temperatures comparable to that of the Venus atmosphere (∼460 °C).
High-temperature electronic devices enabled by hBN-encapsulated graphene
Also at: Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
Also at: Department of Physics, Mokpo National University, Muan, Jeollanam-do 58554, Republic of Korea
Makars Šiškins, Ciaran Mullan, Seok-Kyun Son, Jun Yin, Kenji Watanabe, Takashi Taniguchi, Davit Ghazaryan, Kostya S. Novoselov, Artem Mishchenko; High-temperature electronic devices enabled by hBN-encapsulated graphene. Appl. Phys. Lett. 25 March 2019; 114 (12): 123104. https://doi.org/10.1063/1.5088587
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