In this work, the ferroelectric characteristics of 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 (BCZT) thin films grown on 0.7 wt. % Nb-doped (001)-SrTiO3 (Nb:STO) single-crystal have been investigated. High-resolution transmission electron microscopy and electron energy loss spectroscopy revealed a very sharp Nb:STO/BCZT interface, while selected area electron diffraction revealed the epitaxial growth of the BCZT layer on the Nb:STO substrate. The ferroelectric nature of the BCZT films have been investigated by piezoresponse force microscopy and hysteresis loops. The effect of electric field on polarization switching kinetics has been investigated and has been analyzed by the nucleation limited switching model with a Lorentzian distribution function. The local field variation was found to decrease with the increase in the electric field, and thus, the switching process becomes faster. The peak value of the polarization current and the logarithmic characteristic switching time exhibited an exponential dependence on the inverse of electric field. This model gave an excellent agreement with the experimental polarization reversal transients throughout the whole time range.
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20 August 2018
Research Article|
August 21 2018
Ferroelectric switching dynamics in 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 thin films
J. P. B. Silva
;
J. P. B. Silva
a)
1
Centre of Physics, University of Minho
, Campus de Gualtar, 4710-057 Braga, Portugal
2
IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Departamento de Física e Astronomia, Faculdade de Ciências da Universidade do Porto
, Rua do Campo Alegre 687, 4169-007 Porto, Portugal
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K. Kamakshi;
K. Kamakshi
a)
3
Department of Physics, Madanapalle Institute of Technology & Science
, Madanapalle 517325, Andhra Pradesh, India
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R. F. Negrea;
R. F. Negrea
4
National Institute of Materials Physics
, 105 bis Atomistilor, 077125 Magurele, Romania
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C. Ghica;
C. Ghica
4
National Institute of Materials Physics
, 105 bis Atomistilor, 077125 Magurele, Romania
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J. Wang;
J. Wang
5
Faculty of Science and Technology and MESA+ Institute for Nanotechnology, Inorganic Materials Science, University of Twente
, P. O. Box 217, 7500 AE Enschede, The Netherlands
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G. Koster
;
G. Koster
5
Faculty of Science and Technology and MESA+ Institute for Nanotechnology, Inorganic Materials Science, University of Twente
, P. O. Box 217, 7500 AE Enschede, The Netherlands
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G. Rijnders;
G. Rijnders
5
Faculty of Science and Technology and MESA+ Institute for Nanotechnology, Inorganic Materials Science, University of Twente
, P. O. Box 217, 7500 AE Enschede, The Netherlands
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F. Figueiras
;
F. Figueiras
2
IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Departamento de Física e Astronomia, Faculdade de Ciências da Universidade do Porto
, Rua do Campo Alegre 687, 4169-007 Porto, Portugal
6
Department of Physics and CICECO-AIM, University of Aveiro
, 3810-193 Aveiro, Portugal
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M. Pereira;
M. Pereira
1
Centre of Physics, University of Minho
, Campus de Gualtar, 4710-057 Braga, Portugal
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M. J. M. Gomes
M. J. M. Gomes
1
Centre of Physics, University of Minho
, Campus de Gualtar, 4710-057 Braga, Portugal
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Appl. Phys. Lett. 113, 082903 (2018)
Article history
Received:
June 14 2018
Accepted:
August 04 2018
Citation
J. P. B. Silva, K. Kamakshi, R. F. Negrea, C. Ghica, J. Wang, G. Koster, G. Rijnders, F. Figueiras, M. Pereira, M. J. M. Gomes; Ferroelectric switching dynamics in 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 thin films. Appl. Phys. Lett. 20 August 2018; 113 (8): 082903. https://doi.org/10.1063/1.5044623
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