GaN/AlGaN multiple quantum wells (MQWs) are grown on a -oriented β-Ga2O3 substrate. The optical and structural characteristics of the MQW structure are compared with those of a similar structure grown on sapphire. Scanning transmission electron microscopy and atomic force microscopy images show that the MQW structure exhibits higher crystalline quality of well-defined quantum wells when compared to a similar structure grown on sapphire. X-ray diffraction rocking curve and photoluminescence excitation analyses confirm the lower density of dislocation defects in the sample grown on a β-Ga2O3 substrate. A detailed analysis of time-integrated and time-resolved photoluminescence measurements shows that the MQWs grown on a β-Ga2O3 substrate are of higher optical quality. Our work indicates that the -oriented β-Ga2O3 substrate can be a potential candidate for UV vertical emitting devices.
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20 August 2018
Research Article|
August 20 2018
GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices
I. A. Ajia
;
I. A. Ajia
1
Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST)
, Thuwal 23955, Saudi Arabia
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Y. Yamashita;
Y. Yamashita
2
Tamura Corporation and Novel Crystal Technology, Inc.
, Sayama, Saitama 350-1328, Japan
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K. Lorenz;
K. Lorenz
3
INESC-MN, IPFN, Instituto Superior Técnico, Campus Tecnológico e Nuclear
, Bobadela LRS, Portugal
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M. M. Muhammed;
M. M. Muhammed
1
Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST)
, Thuwal 23955, Saudi Arabia
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L. Spasevski;
L. Spasevski
4
Department of Physics, SUPA, University of Strathclyde
, Glasgow G4 0NG, United Kingdom
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D. Almalawi;
D. Almalawi
1
Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST)
, Thuwal 23955, Saudi Arabia
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J. Xu
;
J. Xu
1
Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST)
, Thuwal 23955, Saudi Arabia
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K. Iizuka;
K. Iizuka
2
Tamura Corporation and Novel Crystal Technology, Inc.
, Sayama, Saitama 350-1328, Japan
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Y. Morishima;
Y. Morishima
2
Tamura Corporation and Novel Crystal Technology, Inc.
, Sayama, Saitama 350-1328, Japan
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D. H. Anjum;
D. H. Anjum
5
Imaging and Characterization Core Laboratory
, King Abdullah University of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia
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N. Wei;
N. Wei
5
Imaging and Characterization Core Laboratory
, King Abdullah University of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia
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R. W. Martin
;
R. W. Martin
4
Department of Physics, SUPA, University of Strathclyde
, Glasgow G4 0NG, United Kingdom
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A. Kuramata;
A. Kuramata
2
Tamura Corporation and Novel Crystal Technology, Inc.
, Sayama, Saitama 350-1328, Japan
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I. S. Roqan
I. S. Roqan
a)
1
Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST)
, Thuwal 23955, Saudi Arabia
a)Author to whom correspondence should be addressed: iman.roqan@kaust.edu.sa
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a)Author to whom correspondence should be addressed: iman.roqan@kaust.edu.sa
Appl. Phys. Lett. 113, 082102 (2018)
Article history
Received:
February 07 2018
Accepted:
July 24 2018
Citation
I. A. Ajia, Y. Yamashita, K. Lorenz, M. M. Muhammed, L. Spasevski, D. Almalawi, J. Xu, K. Iizuka, Y. Morishima, D. H. Anjum, N. Wei, R. W. Martin, A. Kuramata, I. S. Roqan; GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices. Appl. Phys. Lett. 20 August 2018; 113 (8): 082102. https://doi.org/10.1063/1.5025178
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