Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) enabled by an ultrathin, 5 nm, HfO2 film grown by atomic-layer deposition were fabricated. An ultra-low operation voltage of 1 V was achieved by a very high gate capacitance of 1300 nF/cm2. The HfO2 layer showed excellent surface morphology with a low root-mean-square roughness of 0.20 nm and reliable dielectric properties, such as low leakage current and high breakdown electric field. As such, the a-IGZO TFTs exhibit desirable properties such as low power devices, including a small subthreshold swing of 75 mV/decade, a low threshold voltage of 0.3 V, and a high on/off current ratio of 8 × 106. Furthermore, even under an ultralow operation voltage of 0.5 V, the on/off ratio was also up to 1 × 106. The electron transport through the HfO2 layer has also been analyzed, indicating the Poole-Frenkel emission and Fowler-Nordheim tunneling mechanisms in different voltage ranges.
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6 August 2018
Research Article|
August 07 2018
Half-volt operation of IGZO thin-film transistors enabled by ultrathin HfO2 gate dielectric
Pengfei Ma
;
Pengfei Ma
1
Center of Nanoelectronics and School of Microelectronics, Shandong University
, Jinan 250100, China
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Jiamin Sun;
Jiamin Sun
1
Center of Nanoelectronics and School of Microelectronics, Shandong University
, Jinan 250100, China
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Guangda Liang
;
Guangda Liang
1
Center of Nanoelectronics and School of Microelectronics, Shandong University
, Jinan 250100, China
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Yunpeng Li
;
Yunpeng Li
1
Center of Nanoelectronics and School of Microelectronics, Shandong University
, Jinan 250100, China
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Qian Xin
;
Qian Xin
1
Center of Nanoelectronics and School of Microelectronics, Shandong University
, Jinan 250100, China
2
State Key Laboratory of Crystal Materials, Shandong University
, Jinan 250100, China
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Yuxiang Li
;
Yuxiang Li
a)
1
Center of Nanoelectronics and School of Microelectronics, Shandong University
, Jinan 250100, China
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Aimin Song
Aimin Song
a)
1
Center of Nanoelectronics and School of Microelectronics, Shandong University
, Jinan 250100, China
2
State Key Laboratory of Crystal Materials, Shandong University
, Jinan 250100, China
3
School of Electrical and Electronic Engineering, University of Manchester
, Manchester M13 9PL, United Kingdom
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Appl. Phys. Lett. 113, 063501 (2018)
Article history
Received:
April 24 2018
Accepted:
July 22 2018
Citation
Pengfei Ma, Jiamin Sun, Guangda Liang, Yunpeng Li, Qian Xin, Yuxiang Li, Aimin Song; Half-volt operation of IGZO thin-film transistors enabled by ultrathin HfO2 gate dielectric. Appl. Phys. Lett. 6 August 2018; 113 (6): 063501. https://doi.org/10.1063/1.5037410
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