Carrier dynamics through a heterointerface of a Dirac material and a semiconductor was studied by the measurement of the full-range time-resolved core-level photoemission spectroscopy using synchrotron radiation. The electron-hole recombination process during relaxation of the surface photovoltage effect was delayed in a graphene layer due to the bottleneck effect of Dirac cones. When an intermediate buffer layer exists, the recombination mainly takes place at the interfacial Si dangling-bond sites and the relaxation time shortens by one-order of magnitude. The present result demonstrates unusual carrier dynamics at a semiconductor surface, terminated by a layer of the Dirac material.
Interfacial carrier dynamics of graphene on SiC, traced by the full-range time-resolved core-level photoemission spectroscopy
T. Someya, H. Fukidome, N. Endo, K. Takahashi, S. Yamamoto, I. Matsuda; Interfacial carrier dynamics of graphene on SiC, traced by the full-range time-resolved core-level photoemission spectroscopy. Appl. Phys. Lett. 30 July 2018; 113 (5): 051601. https://doi.org/10.1063/1.5043223
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