We demonstrate lasing in an optically pumped GeSn photonic crystal membrane with 16% of Sn. A guided band-edge mode lased up to 60 K. A good agreement was found between experimental and calculated reduced mode frequencies of the photonic crystal. The active Ge0.84Sn0.16 layer was grown on a step-graded GeSn buffer, limiting thereby the density of misfit dislocations. The thresholds obtained (227 kW/cm2 at 15 K to 340 kW/cm2 at 60 K) were comparable to our previous works on suspended microdisks, highlighting the robustness of the GeSn optical gain against potential surface recombination effects stemming from a high surface-to-volume ratio.

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