In recent years, the synthesis and study of individual single-crystal VO2 nanowires (NWs) have been attracting much interest due to the unique properties of the material related with the single-domain metal-insulator phase transition in such NWs. Although single-crystal VO2 NWs offer much promise for practical applications, the lack of a technology for forming NW arrays and, especially, ordered arrays of VO2 NWs still does not permit the mass fabrication of VO2-based devices and materials. Here, we break this barrier and synthesized ordered arrays of free-standing single-crystal monoclinic VO2 NWs. Vertically aligned, strongly periodic VO2 NWs were obtained in a chemical vapor deposition process used to grow VO2 on nanoimprinted Si substrate. Indicative of a high quality of obtained NW is a sharp rise of conductivity at the phase transition in VO2 reaching in magnitude four orders as well as a pronounced faceting of the crystals confirmed by x-ray diffraction measurements. Our approach paves the way toward a broad application of VO2 single crystals with desired sizes, shapes, and aspect ratios in various fields of nanophotonics and nanoelectronics, and in smart materials.
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Growth of ordered arrays of vertical free-standing VO2 nanowires on nanoimprinted Si
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23 July 2018
Research Article|
July 23 2018
Growth of ordered arrays of vertical free-standing VO2 nanowires on nanoimprinted Si
S. V. Mutilin
;
S. V. Mutilin
1
Rzhanov Institute of Semiconductor Physics SB RAS
, Acad. Lavrentiev ave., 13, Novosibirsk 630090, Russia
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V. Ya. Prinz
;
V. Ya. Prinz
a)
1
Rzhanov Institute of Semiconductor Physics SB RAS
, Acad. Lavrentiev ave., 13, Novosibirsk 630090, Russia
a)Author to whom correspondence should be addressed: prinz@isp.nsc.ru
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V. A. Seleznev;
V. A. Seleznev
1
Rzhanov Institute of Semiconductor Physics SB RAS
, Acad. Lavrentiev ave., 13, Novosibirsk 630090, Russia
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L. V. Yakovkina
L. V. Yakovkina
2
Nikolaev Institute of Inorganic Chemistry SB RAS
, Acad. Lavrentiev ave., 3, Novosibirsk 630090, Russia
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a)Author to whom correspondence should be addressed: prinz@isp.nsc.ru
Appl. Phys. Lett. 113, 043101 (2018)
Article history
Received:
March 28 2018
Accepted:
June 12 2018
Citation
S. V. Mutilin, V. Ya. Prinz, V. A. Seleznev, L. V. Yakovkina; Growth of ordered arrays of vertical free-standing VO2 nanowires on nanoimprinted Si. Appl. Phys. Lett. 23 July 2018; 113 (4): 043101. https://doi.org/10.1063/1.5031075
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