In recent years, the synthesis and study of individual single-crystal VO2 nanowires (NWs) have been attracting much interest due to the unique properties of the material related with the single-domain metal-insulator phase transition in such NWs. Although single-crystal VO2 NWs offer much promise for practical applications, the lack of a technology for forming NW arrays and, especially, ordered arrays of VO2 NWs still does not permit the mass fabrication of VO2-based devices and materials. Here, we break this barrier and synthesized ordered arrays of free-standing single-crystal monoclinic VO2 NWs. Vertically aligned, strongly periodic VO2 NWs were obtained in a chemical vapor deposition process used to grow VO2 on nanoimprinted Si substrate. Indicative of a high quality of obtained NW is a sharp rise of conductivity at the phase transition in VO2 reaching in magnitude four orders as well as a pronounced faceting of the crystals confirmed by x-ray diffraction measurements. Our approach paves the way toward a broad application of VO2 single crystals with desired sizes, shapes, and aspect ratios in various fields of nanophotonics and nanoelectronics, and in smart materials.
Growth of ordered arrays of vertical free-standing VO2 nanowires on nanoimprinted Si
S. V. Mutilin, V. Ya. Prinz, V. A. Seleznev, L. V. Yakovkina; Growth of ordered arrays of vertical free-standing VO2 nanowires on nanoimprinted Si. Appl. Phys. Lett. 23 July 2018; 113 (4): 043101. https://doi.org/10.1063/1.5031075
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