The Zn acceptor level position in GaN:Zn was studied on specially designed GaN(undoped)/GaN:Zn([Zn] = 5 × 1016 cm−3) structures by contactless electroreflectance. A well-defined Franz-Keldysh oscillation is present in optical spectra which results from the built-in electric field present in the near-surface layer. The obtained results show that a significant band bending in the GaN:Zn layer occurs lowering the field in the top layer that is in line with predictions for a semiconductor doped with a high ionization energy acceptor. The acceptor level responsible for the Fermi level position in GaN:Zn is found to be at ∼2.3 eV below the conduction band minimum which coincides with levels introduced by Zn atoms substituting nitrogen in the lattice. At the same time, the surface Fermi level of structures is located in the middle of the bandgap, which is in the lower maximum of (0001) GaN surface density of states.
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16 July 2018
Research Article|
July 20 2018
Zn acceptor position in GaN:Zn probed by contactless electroreflectance spectroscopy
Łukasz Janicki
;
Łukasz Janicki
a)
1
Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology
, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
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Matin Sadat Mohajerani
;
Matin Sadat Mohajerani
b)
2
Institut für Halbleitertechnik and Laboratory for Emerging Nanometrology, Technische Universität Braunschweig
, 38092 Braunschweig, Germany
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Jana Hartmann;
Jana Hartmann
2
Institut für Halbleitertechnik and Laboratory for Emerging Nanometrology, Technische Universität Braunschweig
, 38092 Braunschweig, Germany
3
Epitaxy Competence Center ec2
, Hans-Sommer-Straße 66, 38106 Braunschweig, Germany
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Ewelina Zdanowicz
;
Ewelina Zdanowicz
1
Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology
, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
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Hergo-Heinrich Wehmann
;
Hergo-Heinrich Wehmann
2
Institut für Halbleitertechnik and Laboratory for Emerging Nanometrology, Technische Universität Braunschweig
, 38092 Braunschweig, Germany
3
Epitaxy Competence Center ec2
, Hans-Sommer-Straße 66, 38106 Braunschweig, Germany
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Andreas Waag;
Andreas Waag
2
Institut für Halbleitertechnik and Laboratory for Emerging Nanometrology, Technische Universität Braunschweig
, 38092 Braunschweig, Germany
3
Epitaxy Competence Center ec2
, Hans-Sommer-Straße 66, 38106 Braunschweig, Germany
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Robert Kudrawiec
Robert Kudrawiec
1
Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology
, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
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a)
E-mail: lukasz.janicki@pwr.edu.pl.
b)
Currently at OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, 93055 Regensburg, Deutschland.
Appl. Phys. Lett. 113, 032109 (2018)
Article history
Received:
May 22 2018
Accepted:
June 16 2018
Connected Content
A companion article has been published:
New optical spectroscopy approach reveals electronic properties of doped gallium nitride
Citation
Łukasz Janicki, Matin Sadat Mohajerani, Jana Hartmann, Ewelina Zdanowicz, Hergo-Heinrich Wehmann, Andreas Waag, Robert Kudrawiec; Zn acceptor position in GaN:Zn probed by contactless electroreflectance spectroscopy. Appl. Phys. Lett. 16 July 2018; 113 (3): 032109. https://doi.org/10.1063/1.5040941
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