Enhanced gate stack stability in GaN transistors with gate dielectric of bilayer SiN_x by low pressure chemical vapor deposition Available to Purchase

We report enhanced gate stack stability in GaN metal insulator semiconductor high electron mobility transistors (MISHEMTs) by using a bilayer SiN_x as the gate dielectric. To obtain the bilayer gate dielectric scheme, a thin Si-rich SiN_x interlayer was deposited before a high-resistivity SiN_x layer by low pressure chemical vapor deposition. The Si-rich SiN_x can effectively suppress the trapping phenomenon at the interface of the dielectric/AlGaN barrier. The upper high-resistivity SiN_x layer can greatly block the gate leakage current to enable a large gate swing. Compared with the MISHEMTs using a single Si-rich or high-resistivity SiN_x layer, the MISHEMTs with a bilayer gate dielectric take the advantages of both, realizing a gate stack with a stable threshold voltage and low leakage current. These results thus present great potential for developing high-performance GaN MISHEMTs using the bilayer SiN_x gate dielectric scheme for highly efficient power applications.