Transition metal dichalcogenides (TMDCs) are emerging two-dimensional materials for their potential in next-generation electronics. One of the big challenges is to realize a large single-crystal TMDCs film with high mobility, which is critical for channel materials. Herein, we report an optimized atmospheric pressure chemical vapor deposition method for growing large single-crystal monolayer MoS2 on molten glass substrate with domain size up to 563 μm. Better interface quality can be achieved using high-κ dielectrics with respect to the conventional thermal SiO2. Mobility up to 24 cm2 V−1 s−1 at room temperature and 84 cm2 V−1 s−1 at 20 K can be obtained. This low-cost growth of high-quality, large single-crystal size of two dimensional materials provides a pathway for high-performance two dimensional electronic devices.
High-performance transistors based on monolayer CVD MoS2 grown on molten glass
Zhenfeng Zhang, Xiaole Xu, Jian Song, Qingguo Gao, Sichao Li, Qianlan Hu, Xuefei Li, Yanqing Wu; High-performance transistors based on monolayer CVD MoS2 grown on molten glass. Appl. Phys. Lett. 12 November 2018; 113 (20): 202103. https://doi.org/10.1063/1.5051781
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