We report the electrical properties of 60° dislocations originating from the +1.2% lattice mismatch between an unintentionally doped, 315 nm thick Ge0.922Sn0.078 layer (58% relaxed) and the underlying Ge substrate, using deep level transient spectroscopy. The 60° dislocations are found to be split into Shockley partials, binding a stacking fault. The dislocations exhibit a band-like distribution of electronic states in the bandgap, with the highest occupied defect state at ∼EV + 0.15 eV, indicating no interaction with point defects in the dislocation's strain field. A small capture cross-section of 1.5 × 10−19 cm2 with a capture barrier of 60 meV is observed, indicating a donor-like nature of the defect-states. Thus, these dislocation-states are not the source of unintentional p-type doping in the Ge0.922Sn0.078 layer. Importantly, we show that the resolved 60° dislocation-states act as a source of leakage current by thermally generating minority electrons via the Shockley-Read-Hall mechanism.
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9 July 2018
Research Article|
July 09 2018
Electrical properties of extended defects in strain relaxed GeSn
Somya Gupta
;
Somya Gupta
a)
1
Imec
, Kapeldreef 75, Leuven B-3001, Belgium
2
KU Leuven
, Leuven B-3001, Belgium
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Eddy Simoen;
Eddy Simoen
1
Imec
, Kapeldreef 75, Leuven B-3001, Belgium
3
Ghent University
, Ghent B-9000, Belgium
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Roger Loo;
Roger Loo
1
Imec
, Kapeldreef 75, Leuven B-3001, Belgium
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Yosuke Shimura;
Yosuke Shimura
1
Imec
, Kapeldreef 75, Leuven B-3001, Belgium
4
Shizuoka University
, Hamamatsu 432-8011, Japan
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Clement Porret
;
Clement Porret
1
Imec
, Kapeldreef 75, Leuven B-3001, Belgium
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Federica Gencarelli;
Federica Gencarelli
1
Imec
, Kapeldreef 75, Leuven B-3001, Belgium
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Kristof Paredis;
Kristof Paredis
1
Imec
, Kapeldreef 75, Leuven B-3001, Belgium
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Hugo Bender;
Hugo Bender
1
Imec
, Kapeldreef 75, Leuven B-3001, Belgium
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Johan Lauwaert
;
Johan Lauwaert
5
Ghent University
, Zwijnaarde B-9052, Belgium
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Henk Vrielinck
;
Henk Vrielinck
3
Ghent University
, Ghent B-9000, Belgium
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Marc Heyns
Marc Heyns
1
Imec
, Kapeldreef 75, Leuven B-3001, Belgium
2
KU Leuven
, Leuven B-3001, Belgium
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a)
Electronic mail: somya.gupta.ext@imec.be
Appl. Phys. Lett. 113, 022102 (2018)
Article history
Received:
April 12 2018
Accepted:
June 21 2018
Citation
Somya Gupta, Eddy Simoen, Roger Loo, Yosuke Shimura, Clement Porret, Federica Gencarelli, Kristof Paredis, Hugo Bender, Johan Lauwaert, Henk Vrielinck, Marc Heyns; Electrical properties of extended defects in strain relaxed GeSn. Appl. Phys. Lett. 9 July 2018; 113 (2): 022102. https://doi.org/10.1063/1.5034573
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