We propose a method for the observation of the electron-initiated impact ionization process in Si, which is potentially capable of detecting individual impact ionization events. This method detects holes generated by the impact ionization with single charge sensitivity. We demonstrate the method at 8 K by detecting the chain of single holes generated for a constant electron-injection current with the injection-energy threshold close to the Si bandgap energy.
References
1.
T. N.
Rescigno
, M.
Baertschy
, W. A.
Isaacs
, and C. W.
McCurdy
, Science
286
, 2474
(1999
).2.
W.
Maes
, K.
De Meyer
, and R.
van Overstraeten
, Solid-State Electron.
33
, 705
(1990
).3.
K. G.
McKay
and K. B.
McAfee
, Phys. Rev.
91
, 1079
(1953
).4.
K. G.
McKay
, Phys. Rev.
94
, 877
(1954
).5.
P. A.
Wolff
, Phys. Rev.
95
, 1415
(1954
).6.
G. A.
Baraff
, Phys. Rev.
128
, 2507
(1962
).7.
8.
C.
Bäuerle
, D. C.
Glattli
, T.
Meunier
, F.
Portier
, P.
Roche
, P.
Roulleau
, S.
Takada
, and X.
Waintal
, Rep. Prog. Phys.
81
, 056503
(2018
).9.
W.
Kaiser
and G. H.
Wheatley
, Phys. Rev. Lett.
3
, 334
(1959
).10.
C. R.
Crowell
and S. M.
Sze
, Appl. Phys. Lett.
9
, 242
(1966
).11.
C.
Chang
, C.
Hu
, and R. W.
Brodersen
, J. Appl. Phys.
57
, 302
(1985
).12.
M.
Koyanagi
, T.
Matsumoto
, M.
Tsuno
, T.
Shimatani
, Y.
Yoshida
, and H.
Watanabe
, in IEDM Technical Digest
(1993), pp. 341
–344
.13.
A.
Ghetti
, L.
Selmi
, and R.
Bez
, IEEE Trans. Electron Devices
46
, 696
(1999
).14.
K. G.
Anil
, S.
Mahapatra
, and I.
Eisele
, IEEE Electron Device Lett.
22
, 478
(2001
).15.
K. G.
Anil
, S.
Mahapatra
, and I.
Eisele
, IEEE Trans. Electron Devices
49
, 1283
(2002
).16.
P.
Su
, K.
Goto
, T.
Sugii
, and C.
Hu
, IEEE Electron Device Lett.
23
, 550
(2002
).17.
E.
Takeda
and N.
Suzuki
, IEEE Electron Device Lett.
4
, 111
(1983
).18.
J. E.
Chung
, M.
Jeng
, J. E.
Moon
, P.
Ko
, and C.
Hu
, IEEE Trans. Electron Devices
37
, 1651
(1990
).19.
K.
Gopalakrishnan
, P. B.
Griffin
, and J. D.
Plummer
, IEEE Trans. Electron Devices
52
, 69
(2005
).20.
K.
Gopalakrishnan
, R.
Woo
, C.
Jungemann
, P. B.
Griffin
, and J. D.
Plummer
, IEEE Trans. Electron Devices
52
, 77
(2005
).21.
K.
Nishiguchi
and A.
Fujiwara
, Appl. Phys. Express
5
, 085002
(2012
).22.
A.
Fujiwara
and Y.
Takahashi
, Nature
410
, 560
(2001
).23.
A.
Fujiwara
and Y.
Takahashi
, Jpn. J. Appl. Phys., Part 1
41
, 1209
(2002
).24.
A.
Fujiwara
, Y.
Yamazaki
, and Y.
Takahashi
, Appl. Phys. Lett.
80
, 4567
(2002
).25.
Y.
Ono
, K.
Yamazaki
, M.
Nagase
, S.
Horiguchi
, K.
Shiraishi
, and Y.
Takahashi
, Microelectron. Eng.
59
, 435
(2001
).26.
27.
Y.
Ono
, Y.
Takahashi
, K.
Yamazaki
, M.
Nagase
, H.
Namatsu
, K.
Kurihara
, and K.
Murase
, Appl. Phys. Lett.
76
, 3121
(2000
).28.
R.
Thoma
, H. J.
Peifer
, W. L.
Engl
, W.
Quade
, R.
Brunetti
, and C.
Jacoboni
, J. Appl. Phys.
69
, 2300
(1991
).29.
N.
Sano
and A.
Yoshii
, Phys. Rev. B
45
, 4171
(1992
).30.
K. P.
O'Donnell
and X.
Chen
, Appl. Phys. Lett.
58
, 2924
(1991
).© 2018 Author(s).
2018
Author(s)
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