We experimentally demonstrate non-volatile resistive switching (RS) with a resistance window of ∼10× in oxide ion conductor BiYO3 (BYO) thin films. (111)-oriented BYO films of multiple thicknesses (20 nm–300 nm) were deposited using the pulsed laser deposition technique on a Pt/TiO2/SiO2/Si substrate. The thermal stability of BYO films in a wide temperature range (10 K–800 K) was confirmed, using temperature dependent dielectric measurements. Further, impedance spectroscopy suggests the presence of oxygen vacancies (defects) at the Au/BYO interface in the high resistance state (after forming) too. Root mean square roughness of the films varied from 1.16 nm to 2.76 nm, confirming a uniform and homogeneous surface. We explain the conduction mechanism in our Au/BYO/Pt devices using space charge limited current (SCLC) and Ohmic conduction models. The bipolar RS characteristics of the BYO devices are empirically modeled on the basis of the oxygen ion driven filamentary switching process.

1.
T.-C.
Chang
,
K.-C.
Chang
,
T.-M.
Tsai
,
T.-J.
Chu
, and
S. M.
Sze
,
Mater. Today
19
,
254
(
2016
).
2.
Y.-F.
Chang
,
P.-Y.
Chen
,
B.
Fowler
,
Y.-T.
Chen
,
F.
Xue
,
Y.
Wang
,
F.
Zhou
, and
J. C.
Lee
,
J. Appl. Phys.
112
,
123702
(
2012
).
3.
Y.-F.
Chang
,
B.
Fowler
,
Y.-C.
Chen
,
Y.-T.
Chen
,
Y.
Wang
,
F.
Xue
,
F.
Zhou
, and
J. C.
Lee
,
J. Appl. Phys.
116
,
043709
(
2014
);
Y.
Wang
,
Y.-T.
Chen
,
F.
Xue
,
F.
Zhou
,
Y.-F.
Chang
,
B.
Fowler
, and
J. C.
Lee
,
Appl. Phys. Lett.
100
,
083502
(
2012
);
S.
Kim
,
S.
Jung
,
M. H.
Kim
,
Y. C.
Chen
,
Y. F.
Chang
,
K. C.
Ryoo
,
S.
Cho
,
J. H.
Lee
, and
B. G.
Park
,
Small
14
,
1704062
(
2018
);
S.
Kim
,
Y.-F.
Chang
,
M.-H.
Kim
,
T.-H.
Kim
,
Y.
Kim
, and
B.-G.
Park
,
Materials
10
,
459
(
2017
);
[PubMed]
S.
Kim
,
H.
Kim
,
S.
Hwang
,
M.-H.
Kim
,
Y.-F.
Chang
, and
B.-G.
Park
,
ACS Appl. Mater. Interfaces
9
,
40420
(
2017
).
[PubMed]
4.
J. S.
Meena
,
S. M.
Sze
,
U.
Chand
, and
T.-Y.
Tseng
,
Nanoscale Res. Lett.
9
,
526
(
2014
).
5.
D.
Kumar
,
R.
Aluguri
,
U.
Chand
, and
T.
Tseng
,
Ceram. Int.
43
,
S547
(
2017
).
6.
W.
Zhuang
,
W.
Pan
,
B.
Ulrich
,
J.
Lee
,
L.
Stecker
,
A.
Burmaster
,
D.
Evans
,
S.
Hsu
,
M.
Tajiri
, and
A.
Shimaoka
, paper presented at the
IEDM'02 International Electron Devices Meeting
(
2002
);
A.
Asamitsu
,
Y.
Tomioka
,
H.
Kuwahara
, and
Y.
Tokura
,
Nature
388
,
50
(
1997
).
7.
A.
Beck
,
J.
Bednorz
,
C.
Gerber
,
C.
Rossel
, and
D.
Widmer
,
Appl. Phys. Lett.
77
,
139
(
2000
).
8.
Y.
Watanabe
,
J.
Bednorz
,
A.
Bietsch
,
C.
Gerber
,
D.
Widmer
,
A.
Beck
, and
S.
Wind
,
Appl. Phys. Lett.
78
,
3738
(
2001
).
9.
S.
Seo
,
M.
Lee
,
D.
Seo
,
E.
Jeoung
,
D.-S.
Suh
,
Y.
Joung
,
I.
Yoo
,
I.
Hwang
,
S.
Kim
, and
I.
Byun
,
Appl. Phys. Lett.
85
,
5655
(
2004
).
10.
B.
Choi
,
D.
Jeong
,
S.
Kim
,
C.
Rohde
,
S.
Choi
,
J.
Oh
,
H.
Kim
,
C.
Hwang
,
K.
Szot
, and
R.
Waser
,
J. Appl. Phys.
98
,
033715
(
2005
).
11.
A.
Chen
,
S.
Haddad
,
Y.-C.
Wu
,
T.-N.
Fang
,
Z.
Lan
,
S.
Avanzino
,
S.
Pangrle
,
M.
Buynoski
,
M.
Rathor
, and
W.
Cai
, paper presented at the
IEDM Technical Digest Electron Devices Meeting
(
IEEE International
,
2005
).
12.
C.-Y.
Lin
,
C.-Y.
Wu
,
C.-Y.
Wu
,
T.-Y.
Tseng
, and
C.
Hu
,
J. Appl. Phys.
102
,
094101
(
2007
).
13.
N.
Xu
,
L.
Liu
,
X.
Sun
,
X.
Liu
,
D.
Han
,
Y.
Wang
,
R.
Han
,
J.
Kang
, and
B.
Yu
,
Appl. Phys. Lett.
92
,
232112
(
2008
).
14.
H.
Lee
,
P.
Chen
,
T.
Wu
,
Y.
Chen
,
C.
Wang
,
P.
Tzeng
,
C.
Lin
,
F.
Chen
,
C.
Lien
, and
M.-J.
Tsai
, paper presented at the
IEDM Electron Devices Meeting
(
IEEE International
,
2008
).
15.
C.-Y.
Lin
,
C.-Y.
Wu
,
C.-Y.
Wu
,
C.
Hu
, and
T.-Y.
Tseng
,
J. Electrochem. Soc.
154
,
G189
(
2007
).
16.
C.-C.
Hsieh
,
A.
Roy
,
A.
Rai
,
Y.-F.
Chang
, and
S. K.
Banerjee
,
Appl. Phys. Lett.
106
,
173108
(
2015
).
17.
C.-C.
Hsieh
,
A.
Roy
,
Y.-F.
Chang
,
D.
Shahrjerdi
, and
S. K.
Banerjee
,
Appl. Phys. Lett.
109
,
223501
(
2016
);
C.-C.
Hsieh
,
Y.-F.
Chang
,
Y.
Jeon
,
A.
Roy
,
D.
Shahrjerdi
, and
S. K.
Banerjee
,
IEEE Electron Device Lett.
38
,
871
(
2017
).
18.
R.
Schmitt
,
J.
Spring
,
R.
Korobko
, and
J. L.
Rupp
,
ACS Nano
11
,
8881
(
2017
).
19.
M.
Tan
,
K.
Tan
,
Z.
Zainal
,
C.
Khaw
, and
S.
Chen
,
Ceram. Int.
38
,
3403
(
2012
).
20.
V. R.
Kumar
,
P.
Wariar
, and
J.
Koshy
,
J. Adv. Microsc. Res.
6
,
287
(
2011
).
21.
G.
Li
,
M.
Pu
,
X.
Du
,
R.
Sun
,
H.
Zhang
, and
Y.
Zhao
,
Physica C
463–465
,
589
(
2007
).
22.
P. P.
Rao
and
M.
Reddy
,
Dyes Pigm.
63
,
169
(
2004
).
23.
L.
Shi
,
D.
Shang
,
J.
Sun
, and
B.
Shen
,
J. Appl. Phys.
105
,
083714
(
2009
).
24.
K.
Huang
,
C.
Wang
, and
X.
Xu
,
J. Solid State Chem.
98
,
206
(
1992
).
25.
Y.
Zhang
,
S.
Deng
,
M.
Pan
,
M.
Lei
,
X.
Kan
,
Y.
Ding
,
Y.
Zhao
, and
J.
Köhler
,
Phys. Chem. Chem. Phys.
18
,
8205
(
2016
).
26.
Z.
Tianshu
,
P.
Hing
,
H.
Huang
, and
J.
Kilner
,
Solid State Ionics
148
,
567
(
2002
);
N.
Sammes
,
G.
Tompsett
,
H.
Näfe
, and
F.
Aldinger
,
J. Eur. Ceram. Soc.
19
,
1801
(
1999
).
27.
C.
Ma
and
C.
Chen
, in
Advanced Nano Deposition Methods
, edited by
Y.
Lin
and
X.
Chen
(
Wiley-VCH
,
2016
), p.
1
;
Z.
Xin
,
S.
Xiao-Hui
, and
Z.
Dian-Lin
,
Chin. Phys. B
19
,
086802
(
2010
).
28.
D.
Ito
,
Y.
Hamada
,
S.
Otsuka
,
T.
Shimizu
, and
S.
Shingubara
,
Jpn. J. Appl. Phys., Part 1
54
,
06FH11
(
2015
);
A.
Belmonte
,
U.
Celano
,
R.
Degraeve
,
A.
Fantini
,
A.
Redolfi
,
W.
Vandervorst
,
M.
Houssa
,
M.
Jurczak
, and
L.
Goux
,
IEEE Electron Device Lett
36
,
775
(
2015
).
29.
S. K.
Pradhan
,
B.
Xiao
,
S.
Mishra
,
A.
Killam
, and
A. K.
Pradhan
,
Sci. Rep.
6
,
26763
(
2016
).
30.
E.
Yoo
,
J.
Shin
,
T.
Yoon
,
C.
Kang
, and
Y.
Choi
,
J. Phys. D: Appl. Phys.
49
,
295109
(
2016
);
W.
Hu
,
Z.
Wang
,
Y.
Du
,
X.-X.
Zhang
, and
T.
Wu
,
ACS Appl. Mater. Interfaces
6
,
19057
(
2014
).
[PubMed]
31.
H.
Elhadidy
,
J.
Sikula
, and
J.
Franc
,
Semicond. Sci. Technol.
27
,
015006
(
2012
).
32.
E.
Vianello
,
F.
Driussi
,
D.
Esseni
,
L.
Selmi
,
F.
Widdershoven
, and
M. J.
van Duuren
,
IEEE Trans. Electron Devices
54
,
1953
(
2007
).
33.
P.
Singh
,
P.
Rout
,
M.
Singh
,
R.
Rakshit
, and
A.
Dogra
,
J. Appl. Phys.
118
,
114103
(
2015
).
34.
S.-T.
Chang
and
J. Y-m
Lee
,
Appl. Phys. Lett.
80
,
655
(
2002
).
35.
Z.-Z.
Qin
,
Z.-l.
Liu
, and
Y.-B.
Liu
,
Catal. Commun.
10
,
1604
(
2009
).
36.
K.-C.
Chang
,
T.-C.
Chang
,
T.-M.
Tsai
,
R.
Zhang
,
Y.-C.
Hung
,
Y.-E.
Syu
,
Y.-F.
Chang
,
M.-C.
Chen
,
T.-J.
Chu
, and
H.-L.
Chen
,
Nanoscale Res. Lett.
10
,
120
(
2015
).
37.
W.
Chen
,
H.
Barnaby
, and
M.
Kozicki
,
IEEE Electron Device Lett.
37
,
576
(
2016
);
Y.-F.
Chang
,
B.
Fowler
,
Y.-C.
Chen
, and
J. C.
Lee
,
Prog. Solid State Chem.
44
,
75
(
2016
).
38.
R.
Trevisan
,
M.
Döbbelin
,
P. P.
Boix
,
E. M.
Barea
,
R.
Tena‐Zaera
,
I.
Mora‐Seró
, and
J.
Bisquert
,
Adv. Energy Mater.
1
,
781
(
2011
).
39.
B.
Ecker
,
H.-J.
Egelhaaf
,
R.
Steim
,
J. r
Parisi
, and
E.
von Hauff
,
J. Phys. Chem. C
116
,
16333
(
2012
).
40.
N. T.
Ho
,
V.
Senthilkumar
, and
Y. S.
Kim
,
Solid State Electron.
94
,
61
(
2014
).
41.
T.
Zhang
,
X.
Zhang
,
L.
Ding
, and
W.
Zhang
,
Nanoscale Res. Lett.
4
,
1309
(
2009
).
42.
U.
Celano
,
L.
Goux
,
R.
Degraeve
,
A.
Fantini
,
O.
Richard
,
H.
Bender
,
M.
Jurczak
, and
W.
Vandervorst
,
Nano Lett.
15
,
7970
(
2015
);
[PubMed]
F.
Miao
,
J. P.
Strachan
,
J. J.
Yang
,
M. X.
Zhang
,
I.
Goldfarb
,
A. C.
Torrezan
,
P.
Eschbach
,
R. D.
Kelley
,
G.
Medeiros‐Ribeiro
, and
R. S.
Williams
,
Adv. Mater.
23
,
5633
(
2011
).
[PubMed]

Supplementary Material

You do not currently have access to this content.