In recent years, photoelectronic synaptic devices have emerged as a platform for use in next-generation neuromorphic systems and artificial neural networks (ANNs). In this paper, we report an artificial photoelectronic synapse based on an ion-gel gated In-Zn-O phototransistor. The phototransistor is stimulated by a deep ultraviolet light spike, and it can process and store information in the form of an electric current. Key biological synaptic behaviors were investigated, including excitatory post-synaptic current and paired pulse facilitation. Furthermore, channel conduction can be changed by photoelectric synergy in order to simulate potentiation and depression behavior in the human brain. Most importantly, four forms of spike-timing dependent plasticity learning principles were realized by a photoelectric hybrid stimulation. Our studies provide a path towards hybrid photoelectronic ANNs capable of performing solar-blind sensitive tasks.
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8 October 2018
Research Article|
October 11 2018
Deep-ultraviolet-triggered neuromorphic functions in In-Zn-O phototransistors Available to Purchase
Juxiang Wang
;
Juxiang Wang
1
Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University
, Changsha, Hunan 410083, People's Republic of China
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Yang Chen;
Yang Chen
1
Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University
, Changsha, Hunan 410083, People's Republic of China
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Ling-An Kong;
Ling-An Kong
1
Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University
, Changsha, Hunan 410083, People's Republic of China
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Ying Fu;
Ying Fu
1
Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University
, Changsha, Hunan 410083, People's Republic of China
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Yongli Gao;
Yongli Gao
1
Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University
, Changsha, Hunan 410083, People's Republic of China
2
Department of Physics and Astronomy, University of Rochester
, Rochester, New York 14627, USA
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Juxiang Wang
1
Yang Chen
1
Ling-An Kong
1
Ying Fu
1
Yongli Gao
1,2
Jia Sun
1,a)
1
Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University
, Changsha, Hunan 410083, People's Republic of China
2
Department of Physics and Astronomy, University of Rochester
, Rochester, New York 14627, USA
a)
E-mail: [email protected]
Appl. Phys. Lett. 113, 151101 (2018)
Article history
Received:
May 09 2018
Accepted:
September 30 2018
Citation
Juxiang Wang, Yang Chen, Ling-An Kong, Ying Fu, Yongli Gao, Jia Sun; Deep-ultraviolet-triggered neuromorphic functions in In-Zn-O phototransistors. Appl. Phys. Lett. 8 October 2018; 113 (15): 151101. https://doi.org/10.1063/1.5039544
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