Deep acceptor doping of β-Ga2O3 with Mg and N was demonstrated by implantation of the impurity ions into n-type bulk substrates. Systematic physical and electrical characterizations were performed to demonstrate recovery of the implantation-damaged crystals and electrical activation of the dopant atoms by thermal annealing at 1000–1200 °C in an N2 atmosphere. N was found to exhibit much lower thermal diffusivity than Mg, thus enabling the use of higher annealing temperatures to maximize N activation efficiency without significantly altering the impurity profile. Consequently, an n-Ga2O3/Ga2O3:N/n-Ga2O3 structure was capable of sustaining a much larger voltage across its end terminals than its Mg-doped counterpart. The development of an ion implantation technology for acceptor doping of β-Ga2O3 creates unique opportunities for designing and engineering a variety of high-voltage β-Ga2O3 devices.
Acceptor doping of β-Ga2O3 by Mg and N ion implantations
Man Hoi Wong, Chia-Hung Lin, Akito Kuramata, Shigenobu Yamakoshi, Hisashi Murakami, Yoshinao Kumagai, Masataka Higashiwaki; Acceptor doping of β-Ga2O3 by Mg and N ion implantations. Appl. Phys. Lett. 3 September 2018; 113 (10): 102103. https://doi.org/10.1063/1.5050040
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