Improvement of single photon emission from InGaN QDs embedded in porous micropillars

In many InGaN/GaN single photon emitting structures, significant contamination of the single photon stream by background emission is observed. Here, utilizing InGaN/GaN quantum dots incorporated in mesoporous distributed Bragg reflectors (DBRs) within micropillars, we demonstrate methods for the reduction of this contamination. Using the resulting devices, autocorrelation measurements were performed using a Hanbury Brown and Twiss set-up, and thus, we report a working quantum dot device in the III-nitride system utilizing mesoporous DBRs. Uncorrected g⁽²⁾(0) autocorrelation values are shown to be significantly improved when excited with a laser at longer wavelengths and lower powers. Through this optimization, we report a g⁽²⁾(0) value from a blue-emitting InGaN/GaN quantum dot of 0.126 ± 0.003 without any form of background correction.