In many InGaN/GaN single photon emitting structures, significant contamination of the single photon stream by background emission is observed. Here, utilizing InGaN/GaN quantum dots incorporated in mesoporous distributed Bragg reflectors (DBRs) within micropillars, we demonstrate methods for the reduction of this contamination. Using the resulting devices, autocorrelation measurements were performed using a Hanbury Brown and Twiss set-up, and thus, we report a working quantum dot device in the III-nitride system utilizing mesoporous DBRs. Uncorrected g(2)(0) autocorrelation values are shown to be significantly improved when excited with a laser at longer wavelengths and lower powers. Through this optimization, we report a g(2)(0) value from a blue-emitting InGaN/GaN quantum dot of 0.126 ± 0.003 without any form of background correction.
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3 September 2018
Research Article|
September 07 2018
Improvement of single photon emission from InGaN QDs embedded in porous micropillars Available to Purchase
H. P. Springbett
;
H. P. Springbett
1
Department of Materials Science and Metallurgy
, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
2
Institute of Industrial Science (IIS), The University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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K. Gao (高亢)
;
K. Gao (高亢)
2
Institute of Industrial Science (IIS), The University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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J. Jarman
;
J. Jarman
1
Department of Materials Science and Metallurgy
, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
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T. Zhu
;
T. Zhu
1
Department of Materials Science and Metallurgy
, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
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M. Holmes
;
M. Holmes
a)
2
Institute of Industrial Science (IIS), The University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
3
Institute for Nano Quantum Information Electronics (NanoQuine), The University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Y. Arakawa;
Y. Arakawa
2
Institute of Industrial Science (IIS), The University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
3
Institute for Nano Quantum Information Electronics (NanoQuine), The University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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R. A. Oliver
R. A. Oliver
1
Department of Materials Science and Metallurgy
, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
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H. P. Springbett
1,2
J. Jarman
1
M. Holmes
2,3,a)
Y. Arakawa
2,3
R. A. Oliver
1
1
Department of Materials Science and Metallurgy
, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
2
Institute of Industrial Science (IIS), The University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
3
Institute for Nano Quantum Information Electronics (NanoQuine), The University of Tokyo
, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
a)
Email: [email protected]
Appl. Phys. Lett. 113, 101107 (2018)
Article history
Received:
June 25 2018
Accepted:
August 23 2018
Citation
H. P. Springbett, K. Gao, J. Jarman, T. Zhu, M. Holmes, Y. Arakawa, R. A. Oliver; Improvement of single photon emission from InGaN QDs embedded in porous micropillars. Appl. Phys. Lett. 3 September 2018; 113 (10): 101107. https://doi.org/10.1063/1.5045843
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