In many InGaN/GaN single photon emitting structures, significant contamination of the single photon stream by background emission is observed. Here, utilizing InGaN/GaN quantum dots incorporated in mesoporous distributed Bragg reflectors (DBRs) within micropillars, we demonstrate methods for the reduction of this contamination. Using the resulting devices, autocorrelation measurements were performed using a Hanbury Brown and Twiss set-up, and thus, we report a working quantum dot device in the III-nitride system utilizing mesoporous DBRs. Uncorrected g(2)(0) autocorrelation values are shown to be significantly improved when excited with a laser at longer wavelengths and lower powers. Through this optimization, we report a g(2)(0) value from a blue-emitting InGaN/GaN quantum dot of 0.126 ± 0.003 without any form of background correction.
References
1.
N.
Gisin
, G.
Ribordy
, W.
Tittel
, and H.
Zbinden
, “Quantum cryptography
,” Rev. Mod. Phys.
74
, 145
(2002
).2.
B.
Lounis
and M.
Orrit
, “Single-photon sources
,” Rep. Prog. Phys.
68
, 1129
(2005
).3.
P.
Kok
, W. J.
Munro
, K.
Nemoto
, T. C.
Ralph
, J. P.
Dowling
, and G. J.
Milburn
, “Linear optical quantum computing with photonic qubits
,” Rev. Mod. Phys.
79
, 135
(2007
).4.
J.
Rarity
, P.
Owens
, and P.
Tapster
, “Quantum random-number generation and key sharing
,” J. Mod. Opt.
41
, 2435
(1994
).5.
F.
Diedrich
and H.
Walther
, “Nonclassical radiation of a single stored ion
,” Phys. Rev. Lett.
58
, 203
(1987
).6.
B.
Lounis
and W. E.
Moerner
, “Single photons on demand from a single molecule at room temperature
,” Nature
407
, 491
(2000
).7.
A.
Kuhn
, M.
Hennrich
, and G.
Rempe
, “Deterministic single-photon source for distributed quantum networking
,” Phys. Rev. Lett.
89
, 067901
(2002
).8.
C.
Kurtsiefer
, S.
Mayer
, P.
Zarda
, and H.
Weinfurter
, “Stable solid-state source of single photons
,” Phys. Rev. Lett.
85
, 290
(2000
).9.
P.
Michler
, A.
Imamoglu
, M. D.
Mason
, P. J.
Carson
, G. F.
Strouse
, and S. K.
Burrato
, “Quantum correlation among photons from a single quantum dot at room temperature
,” Nature
406
, 968
(2000
).10.
P.
Michler
, A.
Kiraz
, C.
Becher
, W. V.
Schoenfeld
, P. M.
Petroff
, L.
Zhang
, E.
Hu
, and A.
Imamoglu
, “A quantum dot single-photon turnstile device
,” Science
290
, 2282
(2000
).11.
S.
Nakamura
and S. F.
Chichibu
, Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes
(Taylor and Francis
, London
, 2000
).12.
M.
Rau
, T.
Heindel
, S.
Unsleber
, T.
Braun
, J.
Fischer
, S.
Frick
, S.
Nauerth
, C.
Schneider
, G.
Vest
, S.
Reitzenstein
, M.
Kamp
, A.
Forchel
, S.
Höfling
, and H.
Weinfurter
, “Free space quantum key distribution over 500 metres using electrically driven quantum dot single-photon sources—A proof of principle experiment
,” New J. Phys.
16
, 043003
(2014
).13.
S.
Deshpande
, T.
Frost
, A.
Hazari
, and P.
Battacharya
, “Electrically pumped single-photon emission at room temperature from a single InGaN/GaN quantum dot
,” Appl. Phys. Lett.
105
, 141109
(2014
).14.
T.
Wang
, T. J.
Puchtler
, T.
Zhu
, J. C.
Jarman
, L. P.
Nuttall
, and R. A.
Taylor
, “Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots
,” Nanoscale
9
(27
), 9421
(2017
).15.
M.
Holmes
, S.
Kako
, K.
Choi
, M.
Arita
, and Y.
Arakawa
, “Single photons from a hot solid-state emitter at 350 K
,” ACS Photonics
3
(4
), 543
(2016
).16.
S.
Buckley
, K.
Rivoire
, and J.
Vučković
, “Engineered quantum dot single-photon sources
,” Rep. Prog. Phys.
75
, 126503
(2012
).17.
T.
Müller
, J.
Skiba-Szymanska
, A. B.
Krysa
, J.
Huwer
, M.
Felle
, M.
Anderson
, R. M.
Stevenson
, J.
Heffernan
, D. A.
Richie
, and A. J.
Shields
, “A quantum light-emitting diode for the standard telecom window around 1,550 nm
,” Nat. Commun.
9
, 862
(2018
).18.
O.
Gazzano
, S.
Michaelis de Vasconcellos
, C.
Arnold
, A.
Nowak
, E.
Galopin
, I.
Sagnes
, L.
Lanco
, A.
Lemaître
, and P.
Senellart
, “Bright solid-state sources of indistinguishable single photons
,” Nat. Commun.
4
, 1425
(2013
).19.
T.
Someya
and Y.
Arakawa
, “Highly reflective GaN/Al0.34Ga0.66N quarter-wave reflectors grown by metal organic chemical vapor deposition
,” Appl. Phys. Lett.
73
, 3653
(1998
).20.
N.
Nakada
, H.
Ishikawa
, T.
Egawa
, T.
Jimbo
, and M.
Umeno
, “MOCVD growth of high reflective GaN/AlGaN distributed Bragg reflectors
,” J. Cryst. Growth
237
, 961
(2002
).21.
C.
Kruse
, H.
Dartsch
, T.
Aschenbrenner
, S.
Figge
, and D.
Hommel
, “Growth and characterization of nitride-based distributed Bragg reflectors
,” Phys. Status Solidi B
248
, 1748
(2011
).22.
J.-F.
Carlin
and M.
Ilegems
, “High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN
,” Appl. Phys. Lett.
83
, 668
(2003
).23.
T.
Zhu
, Y.
Liu
, T.
Ding
, W. Y.
Fu
, J.
Jarman
, C. X.
Ren
, R. V.
Kumar
, and R. A.
Oliver
, “Wafer-scale fabrication of non-polar mesoporous GaN distributed Bragg reflectors via electrochemical porosification
,” Sci. Rep.
7
, 45344
(2017
).24.
R. A.
Oliver
, G. A. D.
Briggs
, M. J.
Kappers
, C. J.
Humphreys
, S.
Yasin
, J. H.
Rice
, J. D.
Smith
, and R. A.
Taylor
, “InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal
,” Appl. Phys. Lett.
83
, 755
(2003
).25.
T.
Zhu
, F.
Oehler
, B. P. L.
Reid
, R. M.
Emery
, R. A.
Taylor
, M. J.
Kappers
, and R. A.
Oliver
, “Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy
,” Appl. Phys. Lett.
102
, 251905
(2013
).26.
S.
Li
and A.
Waag
, “GaN based nanorods for solid state lighting
,” J. Appl. Phys.
111
, 071101
(2012
).27.
S.
Kako
, M.
Holmes
, S.
Sergent
, M.
Bürger
, D. J.
As
, and Y.
Arakawa
, “Single-photon emission from cubic GaN quantum dots
,” Appl. Phys. Lett.
104
, 011101
(2014
).28.
M.
Holmes
, S.
Kako
, K.
Choi
, M.
Arita
, and Y.
Arakawa
, “Spectral diffusion and its influence on the emission linewidths of site-controlled GaN nanowire quantum dots
,” Phys. Rev. B
92
, 115447
(2015
).© 2018 Author(s).
2018
Author(s)
You do not currently have access to this content.
