In this work, the isotropic piezoresistance in the (0001) plane of p-type 4H-SiC was discovered by means of the hole energy shift calculation and the coordinate transformation. These results were also confirmed by the measurement of the piezoresistance using a bending beam method. The fundamental longitudinal and transverse piezoresistive coefficients π11 and π12 were found to be 6.43 × 10−11 Pa−1 and −5.12 × 10−11 Pa−1, respectively. The isotropy of the piezoresistance in the basal plane of p-type 4H-SiC is attributed to the isotropic hole energy shift under uniaxial strain. This interesting phenomenon in p-type 4H-SiC is promising for the design and fabrication of mechanical sensors and strain-engineered electronics since high sensitivity and consistent performance can be achieved regardless of the crystallographic orientation.
Isotropic piezoresistance of p-type 4H-SiC in (0001) plane
Tuan-Khoa Nguyen, Hoang-Phuong Phan, Toan Dinh, Toshiyuki Toriyama, Koichi Nakamura, Abu Riduan Md Foisal, Nam-Trung Nguyen, Dzung Viet Dao; Isotropic piezoresistance of p-type 4H-SiC in (0001) plane. Appl. Phys. Lett. 2 July 2018; 113 (1): 012104. https://doi.org/10.1063/1.5037545
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